IXFK260N17T Datasheet PDF - IXYS

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IXFK260N17T
IXYS

Part Number IXFK260N17T
Description GigaMOS Power MOSFET
Page 5 Pages


IXFK260N17T datasheet pdf
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Advance Technical Information
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GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK260N17T
IXFX260N17T
VDSS =
ID25 =
RDS(on)
trr
170V
260A
6.5mΩ
200ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
dV/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
170
170
V
V
± 20 V
± 30 V
260 A
160 A
700 A
100 A
3J
1670
W
20 V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
170 V
2.5 5.0 V
± 200 nA
50 μA
5 mA
6.5 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Synchronous Recification
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100136(03/09)



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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1
105 170
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
24
2870
450
nF
pF
pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
54
40
90
40
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
400
108
116
nC
nC
nC
RthJC
RthCS
0.09 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 60A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 130A, -di/dt = 100A/μs
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
260 A
1040 A
1.3 V
200 ns
0.56 μC
9.00 A
wIXwwF.DKata2Sh6ee0t4UN.co1m7T
IXFX260N17T
TO-264 (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t 300μs; Duty Cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
1.6
Fig. 3. Output Characteristics
@ 150ºC
260
240
VGS = 10V
8V
220 7V
200
180 6V
160
140
120
100
5V
80
60
40
20
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 130A Value
vs. Drain Current
3.4
VGS = 10V
3.0
2.6 TJ = 175ºC
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
50 100 150 200 250 300 350
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IwXwwF.DKata2Sh6ee0t4UN.co1m7T
IXFX260N17T
Fig. 2. Extended Output Characteristics
@ 25ºC
350
VGS = 10V
8V
300
250 7V
200 6V
150
100
50 5V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 130A Value
vs. Junction Temperature
3.0
2.8
VGS = 10V
2.6
2.4
2.2
2.0 I D = 260A
1.8 I D = 130A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
External Lead Current Limit
-25 0
25 50 75 100 125 150
TC - Degrees Centigrade
175
IXYS REF:F_260N17T(9E)3-23-09



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wIXwwF.DKata2Sh6ee0t4UN.co1m7T
IXFX260N17T
Fig. 7. Input Admittance
200
180
160
TJ = 150ºC
140 25ºC
- 40ºC
120
100
80
60
40
20
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
250
200
150
100 TJ = 150ºC
TJ = 25ºC
50
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
300
275
250
225
200
175
150
125
100
75
50
25
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
125ºC
20 40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 10. Gate Charge
10
9 VDS = 85V
I D = 130A
8 I G = 10mA
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450
QG - NanoCoulombs
100,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
10,000
Coss
1,000
Crss
100
0
5 10 15 20 25 30 35 40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 12. Forward-Bias Safe Operating Area
1,000
RDS(on) Limit
25µs
100
100µs
TJ = 175ºC
TC = 25ºC
Single Pulse
10
1
1ms
10
VDS - Volts
100
1000



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