IXFK240N15T2 Datasheet PDF - IXYS

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IXFK240N15T2
IXYS

Part Number IXFK240N15T2
Description GigaMOS TrenchT2 HiperFET Power MOSFET
Page 6 Pages


IXFK240N15T2 datasheet pdf
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Advance Technical Information
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GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK240N15T2
IXFX240N15T2
VDSS =
ID25 =
RDS(on)
trr
150V
240A
5.2mΩ
140ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
dV/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
150
150
V
V
± 20 V
± 30 V
240 A
160 A
600 A
120 A
2J
1250
W
20 V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
150 V
2.5 5.0 V
± 200 nA
25 μA
3 mA
4.1 5.2 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Synchronous Recification
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100191(09/09)



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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1
125 210
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
32
2280
270
nF
pF
pF
RGi Gate Input Resistance
1.50 Ω
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
48
125
77
145
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
460
125
130
nC
nC
nC
RthJC
RthCS
0.12 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 100A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 120A, -di/dt = 100A/μs
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
240 A
960 A
1.2 V
140 ns
410 nC
8.2 A
IXwFwwK.D2at4aSh0eeNt4U1.c5omT2
IXFX240N15T2
TO-264 (IXFK) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
0.25
20.83
2.59
3.17 3.66
6.07
8.38
3.81
1.78
6.27
8.69
4.32
2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.010
.820
.102
.125 .144
.239
.330
.150
.070
.247
.342
.170
.090
.238 .248
.062 .072
PLUS 247TM (IXFX) Outline
Note 1. Pulse test, t 300μs; duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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Fig. 1. Output Characteristics
@ TJ = 25ºC
240
VGS = 15V
10V
200 8V
7V
160
6V
120
80
40
0
0.0
240
200
160
120
80
5.5V
5V
0.2 0.4 0.6 0.8 1.0
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
VGS = 15V
10V
8V
7V
6V
5V
1.2
40
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 120A Value
vs. Drain Current
3.4
VGS = 10V
3.0
2.6 TJ = 175ºC
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
40 80 120 160 200 240 280 320 360
ID - Amperes
IXwFwwK.D2ata4Sh0eeNt4U1.co5mT2
IXFX240N15T2
400
350
300
250
200
150
100
50
0
0
Fig. 2. Extended Output Characteristics
@ TJ = 25ºC
VGS = 10V
8V
7V
6V
5.5V
5V
1 2 3 4 5 6 7 8 9 10
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 120A Value
vs. Junction Temperature
3.0
VGS = 10V
2.6
2.2 I D = 240A
I D = 120A
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
-25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved



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IXwFwwK.D2at4aSh0eeNt4U1.c5omT2
IXFX240N15T2
200
180
160
140
120
100
80
60
40
20
0
3.0
Fig. 7. Input Admittance
TJ = 150ºC
25ºC
- 40ºC
3.5 4.0 4.5 5.0 5.5 6.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
320
280
240
200
160
120
TJ = 150ºC
80 TJ = 25ºC
40
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD - Volts
Fig. 8. Transconductance
400
TJ = - 40ºC
350
300
25ºC
250
200 150ºC
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
ID - Amperes
10
9 VDS = 75V
I D = 120A
8 I G = 10mA
7
Fig. 10. Gate Charge
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
QG - NanoCoulombs
100.0
f = 1 MHz
10.0
Fig. 11. Capacitance
Ciss
1,000.0
100.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
25µs
External Lead Limit
100µs
Coss
1.0
0.1
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10.0
1.0
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
1ms
10ms
100ms
DC
10 100
VDS - Volts
1,000
IXYS REF:F_240N15T2(8V)9-11-09



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