IXFH14N100 Datasheet PDF - IXYS

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IXFH14N100
IXYS

Part Number IXFH14N100
Description HiPerFET Power MOSFETs
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IXFH14N100 datasheet pdf
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HiPerFETTM
Power MOSFETs
IXFH/IXFT/IXFX14N100
IXFH/IXFT/IXFX15N100
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
V
DSS
I
D25
1000 V 14 A
1000 V 15 A
trr £ 200 ns
R
DS(on)
0.75 W
0.70 W
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
E
AR
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
14N100
15N100
14N100
15N100
14N100
15N100
1000
1000
±20
±30
14
15
56
60
14
15
45
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
360 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
14N100
15N100
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1000
2.5
V
4.5 V
±100 nA
250 mA
1 mA
0.75 W
0.70 W
TO-247 AD
(IXFH)
PLUS 247TM
(IXFX)
(TAB)
G
D
TO-268 (D3)
(IXFT)
(TAB)
G
S
(TAB)
Features
q International standard packages
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
- easy to drive and to protect
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q AC motor control
q Temperature and lighting controls
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247TM)
q Highpowersurfacemountablepackage
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97535B (1/99)
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IXFH14N100
IXFH15N100
IXFT14N100 IXFX15N100
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IXFT15N100 IXFX14N100
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
t
d(off)
tf
Qg(on)
Qgs
Q
gd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
6 10
4500
430
150
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
R
G
=
2
W
(External),
27
30
120
30
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
220
30
85
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
(TO-247 Case Style)
0.35 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
14N100
15N100
ISM Repetitive;
14N100
pulse width limited by TJM
15N100
V I = I , V = 0 V,
SD F S GS
Pulse test, t £ 300 ms, duty cycle d £ 2 %
14 A
15 A
56 A
60 A
1.5 V
trr
TJ = 25°C
200 ns
QRM
IF = IS
-di/dt = 100 A/ms,
T=
J
125°C
TJ = 25°C
350 ns
1 mC
IRM
VR = 100 V
TJ = 125°C
TJ = 25°C
2 mC
10 A
TJ = 125°C
15 A
TO-268AA (D3 PAK)
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
PLUS247TM (IXFX) Outline
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFH14N100
IXFH15N100
IXFT14N100 IXFX15N100
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IXFT15N100 IXFX14N100
20
16
TJ = 25OC
VGS = 9V
8V
7V
6V
12
5V
8
4V
4
0
0 4 8 12 16
VDS - Volts
Fig.1 Output Characteristics
20
2.0
1.8 VGS = 10V TJ = 125OC
1.6
1.4
1.2
TJ = 25OC
1.0
0.8
0
369
ID - Amperes
12
Fig.3 R vs. Drain Current
DS(on)
20
16 IXF_15N100
15
12 IXF_14N100
8
4
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
Fig.5 Drain Current vs. Case Temperature
16
TJ = 125OC
12
8
VGS = 9V
8V
7V
6V
4
5V
4V
0
0 4 8 12 16 20
VDS - Volts
Fig.2 Output characteristics at elevated
temperature
2.2
VGS = 10V
2.0
1.8
1.6 ID = 15A
1.4 ID = 7.5A
1.2
1.0
25
50 75 100 125
TJ - Degrees C
150
Fig.4 Temperature Dependence of Drain
to Source Resistance
14
12
10
8
6 TJ = 125oC
4
2
TJ = 25oC
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Volts
Fig.6 Input admittance
© 2000 IXYS All rights reserved
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IXFH14N100
IXFH15N100
IXFT14N100www.DaItXaSFheXet41U.5coNm 100
IXFT15N100 IXFX14N100
12
10
8
6
4
2
0
0
VVdDSs==350000VV
ID==370.A5A
IG==1100mmAA
40 80 120 160 200 240 280
Gate Charge - nC
Fig.7 Gate Charge Characteristic Curve
40
32
24
TJ = 125OC
16
TJ = 25OC
8
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Volts
Fig.9 Source current vs Source drain voltage.
1
5000
2500
1000
500
250
Ciss
Coss
Crss
f = 1MHz
100
0
5 10 15 20 25 30 35 40
VDS - Volts
Fig.8 Capacitance Curves
0.1
0.01
10-3
10-2
10-1
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
© 2000 IXYS All rights reserved
Single pulse
100 101
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