ISTS149 Datasheet PDF - ISOCOM

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ISTS149
ISOCOM

Part Number ISTS149
Description (ISTS149 / ISTS70x) REFLECTIVE OPTICAL SWITCHES
Page 3 Pages


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ISTS149, ISTS703A, ISTS708
REFLECTIVE OPTICAL
SWITCHES
DESCRIPTION
ISTS708
The ISTS149, ISTS703A, ISTS708 each consist 5.1
of an infrared emitting diode and a NPN silicon
photo transistor mounted side by side on
point of
converging axes in a polycarbonate housing. The
optimum
package is designed to optimise the mechanical
response
resolution, coupling efficiency, ambient light
rejection, cost and reliability.The phototransistor
responds to radiation from the emitter only when 3.3
a reflective object passes within its field of view 3.0
9.7 Dimensions in mm
1 2 34
3.18 nom.
17.8
15.5
15.0
FEATURES
l Phototransistor output
l Opaque housing provides improved
visible light rejection
l Three available package types
l Adjustable side-mounting provision
l Also available with flying leads, with or
without connector, supplied as required
APPLICATIONS
l Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches, VCR's,
14
4.1
3.5
ISTS149
5.1
5.1
12.3
9.5
0.5
sq.
2.54
12 34
17.8
point of
optimum
response
3.18 nom.
2.3
2.54
4.6
8.9
3.8
ISTS703A 9.15
0.5
sq.
2.54
43 21
5.1
point of
optimum
response
8.0
4.45 nom.
1.70
1.45
17.0
15.0
5.5
2
3 0.5 22.8
sq.
3.3
2.54 3.0
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
24/9/97
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
DB92074-AAS/A1



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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 85°C
Operating Temperature
-25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
3V
90mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current I
C
Power Dissipation
30V
5V
20mA
50mW
ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.6 V
IF = 40mA
3 V IR = 100µA
100 µA
VR = 3V
Output Collector-emitter Breakdown (BVCEO) 30
( Note 1 )
V IC = 1mA
Emitter-collector Breakdown (BVECO) 5
V IE = 100µA
Collector-emitter Dark Current (ICEO)
100 nA
VCE = 15V
Coupled
On-State Collector Current IC ( ON )
( Note 1 )
ISTS149
25
ISTS703A
200
ISTS708
10
µA
µA
µA
Collector-emitter Saturation VoltageVCE(SAT)
ISTS149
ISTS703A
ISTS708
0.4 V
0.4 V
0.4 V
Note 1 Special Selections are available on request. Please consult the factory.
40mA IF , 5V VCE
D(mm) = 3.8mm
40mA IF , 5V VCE
D(mm) = 3.8mm
40mA IF , 5V VCE
D(mm) = 3.8mm
40mA IF , 3µA IC
D(mm) = 3.8mm
40mA IF , 100µA IC
D(mm) = 3.8mm
40mA IF , 3µA IC
D(mm) = 3.8mm
24/9/97
DB92074-AAS/A1



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Collector Power Dissipation vs. Ambient Temperature
60
50
40
30
20
10
0
-25
0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
0
-25
0 25 50 75 100 125
Ambient temperature T ( °C )
A
Normalized Output Current
vs. Ambient Temperature
1.5
IF = 40mA
VCE = 5V
Normalized Output Current vs.
Collector-emitter Voltage
10
4
2 IF = 60mA
1 40mA
20mA
0.4
0.2 10mA
Normalized to
0.1 I = 40mA
F
V = 5V
0.04
CE
Pulsed
0.02
0.01
T = 25°C
A
PW = 100µs
PRR = 100pps
0.1 1 10 100
Collector-emitter voltage V ( V )
CE
Normalized Output Current vs.
Forward Current
2.0
Normalized to
1.8 IF = 40mA
1.6 VCE = 0.4V
Pulsed
1.4 PW = 100µs
T = 25°C
A
1.2 PRR = 100pps
1.0
0.8
0.6
0.4
0.2
0
1
2 5 10 20
Forward current IF (mA)
50
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
IF = 40mA
0.20 IC = 100µA
1.0 0.16
0.12
0.5 0.08
0
-25
0 25 50 75
Ambient temperature TA ( °C )
100
24/9/97
0.04
0
-25
0 25 50 75 100
Ambient temperature TA ( °C )
DB92074-AAS/A1



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