ISL73127RH Datasheet PDF - Intersil Corporation

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ISL73127RH
Intersil Corporation

Part Number ISL73127RH
Description Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
Page 11 Pages


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Radiation Hardened Ultra High Frequency NPN/PNP
Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
ISL73128EH
The ISL73096, ISL73127 and ISL73128 are radiation
hardened bipolar transistor arrays. The ISL73096 consists of
three NPN transistors and two PNP transistors on a common
substrate. The ISL73127 consists of five NPN transistors on a
common substrate. The ISL73128 consists of five PNP
transistors on a common substrate.
The ISL73096EH, ISL73127EH and ISL73128EH devices
encompass all of the production testing of the ISL73096RH,
ISL73127RH and ISL73128RH devices and additionally are
tested in the Intersil Enhanced Low Dose Rate Sensitivity
(ELDERS) product manufacturing flow.
One of our bonded wafer, dielectrically isolated fabrication
processes provides an immunity to single event latch-up and
the capability of highly reliable performance in a radiation
environment.
The high gain-bandwidth product and low noise figure of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Features
• Electrically screened to SMD # 5962-07218
• QML qualified per MIL-PRF-38535 requirements
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation
• NPN gain bandwidth product (FT) . . . . . . . . . . . . . . 8GHz (typ)
• NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)
• NPN early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)
• PNP gain bandwidth product (FT). . . . . . . . . . . . . 5.5GHz (typ)
• PNP current gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)
• PNP early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ)
• Complete isolation between transistors
* Limit established by characterization.
Related Literature
Applications
AN1503, Amplifier Design Using ISL73096RH,
ISL73127RH, ISL73128RH Transistor Arrays
TID REPORT for the Radiation Hardened UHF NPN/PNP
transistor array
• High frequency amplifiers and mixers
• High frequency converters
• Synchronous detector
120
115
110
105
100
95
90
85
80 0
50 100 150 200 250 300
krad(Si)
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
75
70
65
60
55
50
45
40
0 50 100 150 200 250 300
krad(Si)
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
June 27, 2014
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1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2007, 2009, 2012, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.



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ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Typical Applications
VCC
+
-
R1
39kΩ
C1 1nF
RS
50Ω
R2
100Ω
C2 1nF
R3
39kΩ
Q5
R4
100Ω
C3 1nF
VO
Q2
RL
50Ω
+-
VS
FIGURE 3. HIGH-GAIN, LOW-NOISE AMPLIFIER MADE FROM ISL73127
R1
2kΩ
Q5
R2
15kΩ
R4
100Ω
+
-
VEE
Q4
R3
1kΩ
C2
1nF
RS
50Ω
RF
240Ω
C1
1nF
+-
VS
L1
1µH
VO
C3
1nF
Q2
RL
50Ω
RE
5.1Ω
FIGURE 4. WIDEBAND AMPLIFIER MADE FROM ISL73096
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ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Ordering Information
ORDERING
SMD NUMBER
PART
NUMBER (Notes 1, 2)
TEMP. RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
5962F0721804VXC
ISL73096EHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721801VXC
ISL73096RHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721801V9A
ISL73096RHVX
-55 to +125
DIE
5962F0721804V9A
ISL73096EHVX
-55 to +125
DIE
5962F0721805VXC
ISL73127EHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721802VXC
ISL73127RHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721802V9A
ISL73127RHVX
-55 to +125
DIE
5962F0721805V9A
ISL73127EHVX
-55 to +125
DIE
5962F0721806VXC
ISL73128EHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721803VXC
ISL73128RHVF
-55 to +125
16 Ld FLATPACK
K16.A
5962F0721803V9A
ISL73128RHVX
-55 to +125
DIE
5962F0721806V9A
ISL73128EHVX
-55 to +125
DIE
ISL73096RHF/PROTO
ISL73096RHF/PROTO
-55 to +125
16 Ld FLATPACK
K16.A
ISL73096RHX/SAMPLE
ISL73096RHX/SAMPLE
-55 to +125
DIE
ISL73127RHF/PROTO
ISL73127RHF/PROTO
-55 to +125
16 Ld FLATPACK
K16.A
ISL73127RHX/SAMPLE
ISL73127RHX/SAMPLE
-55 to +125
DIE
ISL73128RHF/PROTO
ISL73128RHF/PROTO
-55 to +125
16 Ld FLATPACK
K16.A
ISL73128RHX/SAMPLE
ISL73128RHX/SAMPLE
-55 to +125
DIE
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
Ordering Information table must be used when ordering.
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ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Pin Configurations
ISL73096RH, ISL73096EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2 Q1
3
4
5 Q2
6
7
8 Q3
NC 16
15
Q5 14
13
12
Q4 11
10
9
ISL73127RH, ISL73127EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4 Q2
5 NC
6
7
8 Q3
16
Q1 15
14
Q5 13
12
11
10
Q4 9
ISL73128RH, ISL73128EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4 Q2
5 NC
6
7
8 Q3
16
Q1 15
14
Q5 13
12
11
10
Q4 9
Pin Descriptions
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN NAME/DESCRIPTION
ISL73096RH, ISL73096EH
Q1 BASE
Q1 EMITTER
Q1 COLLECTOR
Q2 EMITTER
Q2 BASE
Q2 COLLECTOR
Q3 EMITTER
Q3 BASE
Q3 COLLECTOR
Q4 EMITTER
Q4 BASE
Q4 COLLECTOR
Q5 EMITTER
Q5 BASE
Q5 COLLECTOR
NC (No internal Connection)
PIN NAME/DESCRIPTION
ISL73127RH/ISL73128RH
ISL73127EH/ISL73128EH
Q1 COLLECTOR
Q2 COLLECTOR
Q2 EMITTER
Q2 BASE
NC (No internal Connection)
Q3 COLLECTOR
Q3 EMITTER
Q3 BASE
Q4 BASE
Q4 EMITTER
Q4 COLLECTOR
Q5 COLLECTOR
Q5 EMITTER
Q5 BASE
Q1 BASE
Q1 EMITTER
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ISL73127RH datasheet pdf
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ISL73127RH Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73127RH
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