IS62C256AL Datasheet PDF - Integrated Silicon Solution

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IS62C256AL
Integrated Silicon Solution

Part Number IS62C256AL
Description 32K x 8 LOW POWER CMOS STATIC RAM
Page 12 Pages


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IS65C256AL
IS62C256AL
32K x 8 LOW POWER CMOS STATIC RAM
ISSI®
www.DataSheet4U.com
MARCH 2006
FEATURES
• Access time: 25 ns, 45 ns
• Low active power: 200 mW (typical)
• Low standby power
— 150 µW (typical) CMOS standby
— 15 mW (typical) operating
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
• Lead-free available
• Industrial and Automotive temperatures avail-
able
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS62C256AL/IS65C256AL is a low power,
32,768 word by 8-bit CMOS static RAM. It is fabricated
using ISSI's high-performance, low power CMOS tech-
nology.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Select (CE) input and an active LOW Output
Enable (OE) input. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62C256AL/IS65C256AL is pin compatible with
other 32Kx8 SRAMs in plastic SOP or TSOP (Type I)
package.
A0-A14
VDD
GND
I/O0-I/O7
DECODER
32K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
03/17/06
1



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IS65C256AL
IS62C256AL
PIN CONFIGURATION
28-Pin SOP
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VDD
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
PIN CONFIGURATION
28-Pin TSOP
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
ISSI ®
www.DataSheet4U.com
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
14 GND
13 I/O2
12 I/O1
11 I/O0
10 A0
9 A1
8 A2
PIN DESCRIPTIONS
A0-A14
CE
OE
WE
I/O0-I/O7
VDD
GND
Address Inputs
Chip Select Input
Output Enable Input
Write Enable Input
Input/Output
Power
Ground
TRUTH TABLE
Mode
WE
Not Selected
(Power-down)
Output Disabled
Read
Write
X
H
H
L
CE OE I/O Operation VDD Current
HX
High-Z
ISB1, ISB2
LH
LL
LX
High-Z
DOUT
DIN
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TSTG
PT
IOUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
0.5
20
Unit
V
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06



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IS65C256AL
IS62C256AL
OPERATING RANGE
Part No.
IS62C256AL
IS62C256AL
IS65C256AL
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
VDD
5V ± 10%
5V ± 10%
5V ± 10%
ISSI ®
www.DataSheet4U.com
DC ELECTRICAL CHARACTERISTICS
Symbol
VOH
VOL
VIH
VIL
ILI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Test Conditions
VDD = Min., IOH = –1.0 mA
VDD = Min., IOL = 2.1 mA
GND VIN VDD
ILO Output Leakage
GND VOUT VDD,
Outputs Disabled
Note: 1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Min.
2.4
2.2
–0.3
–1
–2
–10
–1
–2
–10
Max.
0.4
VDD + 0.5
0.8
1
2
10
1
2
10
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06
3



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IS65C256AL
IS62C256AL
ISSI ®
www.DataSheet4U.com
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol
ICC1
ICC2
Parameter
VDD Operating
Supply Current
VDD Dynamic Operating
Supply Current
Test Conditions
VDD = Max., CE = VIL
IOUT = 0 mA, f = 0
VDD = Max., CE = VIL
IOUT = 0 mA, f = fMAX
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ. (2)
-25 ns
Min. Max.
— 15
— 20
— 25
— 25
— 30
— 35
15
-45 ns
Min. Max.
— 15
— 20
— 25
— 20
— 25
— 30
12
ISB1 TTL Standby Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE VIH, f = 0
Com.
Ind.
Auto.
— 100
— 120
— 150
— 100
— 120
— 150
ISB2 CMOS Standby
VDD = Max.,
Com. — 15
— 15
Current (CMOS Inputs)
CE VDD – 0.2V,
Ind. — 20 — 20
VIN VDD – 0.2V, or
Auto.
— 50
— 50
VIN 0.2V, f = 0
typ. (2)
5
5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5.0V, TA = 25oC and not 100% tested.
Unit
mA
mA
µA
µA
CAPACITANCE(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
8
10
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
4 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06



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