IRSM515-024 Datasheet PDF - International Rectifier

No Preview Available ! IRSM505-024 IRSM515-024 Series 2.3Ω, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM505-024 and IRSM515-024 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a familiar package. The modules are optimized for low EMI characteristics. IRSM505-024 includes temperature feedback while IRSM515-024 does not. Features  250V 3-phase inverter including high voltage gate drivers  Integrated bootstrap functionality  Low 2.3Ω (max, 25°C) RDS(on) Trench FREDFET  Under-voltage lockout for all channels  Matched propagation delay for all channels  Temperature feedback via NTC (IRSM505-024 only)  Optimized dV/dt for loss and EMI trade offs  Open-source for single and leg-shunt current sensing  3.3V logic compatible & advanced input filter  Driver tolerant to negative transient voltage (-Vs)  Isolation 1900VRMS, 1min  RoHS Compliant  Certified by UL - File Number E252584 Base Part Number IRSM505-024 IRSM515-024 NTC Yes No Package Type SOP23 DIP23 DIP23A SOP23 DIP23 DIP23A Standard Pack Form Quantity Tube 240 Tube 240 Tube 240 Tube 240 Tube 240 Tube 240 Orderable Part Number IRSM505-024PA IRSM505-024DA IRSM505-024DA2 IRSM515-024PA IRSM515-024DA IRSM515-024DA2 1 www.irf.com © 2014 International Rectifier November 24, 2014

No Preview Available ! Internal Electrical Schematic IRSM505-024 IRSM515-024 Series 1 COM 2 VB1 3 VCC1 4 HIN1 5 LIN1 6 NC 7 VB2 8 VCC2 9 HIN2 10 LIN2 11 VTH 12 VB3 13 VCC3 14 HIN3 15 LIN3 16 NC Half-Bridge HVIC Integrated in HVIC Half-Bridge HVIC Half-Bridge HVIC IRSM505-024 17 V+ 18 U/VS1 19 VR1 20 VR2 21 V/VS2 22 VR3 23 W/VS3 1 COM 2 VB1 3 VCC1 4 HIN1 5 LIN1 6 NC 7 VB2 8 VCC2 9 HIN2 10 LIN2 11 NC 12 VB3 13 VCC3 14 HIN3 15 LIN3 16 NC Half-Bridge HVIC Integrated in HVIC Half-Bridge HVIC Half-Bridge HVIC IRSM515-024 17 V+ 18 U/VS1 19 VR1 20 VR2 21 V/VS2 22 VR3 23 W/VS3 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. Symbol Description Min Max Unit BVDSS MOSFET Blocking Voltage --- 250 V IO @ TC=25°C DC Output Current per MOSFET --- 1.6 A IOP @ TC =25°C Pulsed Output Current per MOSFET (Note 1) --- 7 Pd @ TC=25°C Maximum Power Dissipation per MOSFET --- 13 W VISO Isolation Voltage (1min) --- 1900 VRMS TJ Operating Junction Temperature -40 150 °C TC Operating Case Temperature -40 150 °C TS Storage Temperature -40 150 °C VS1,2,3 High Side Floating Supply Offset Voltage VB1,2,3 - 20 VB1,2,3 +0.3 V VB1,2,3 High Side Floating Supply Voltage -0.3 275 V VCC Low Side and Logic Supply voltage -0.3 25 V VIN Input Voltage of LIN, HIN Note 1: Pulse Width = 100µs, Single Pulse COM -0.3 VCC+0.3 V 2 www.irf.com © 2014 International Rectifier November 24, 2014

No Preview Available ! IRSM505-024 IRSM515-024 Series Recommended Operating Conditions Symbol Description Min Max V+ Positive DC Bus Input Voltage --- 200 VS1,2,3 VB1,2,3 VCC High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Low Side and Logic Supply Voltage (Note 2) VS+12 13.5 200 VS+20 16.5 VIN Input Voltage of LIN, HIN, ITRIP, EN, FLT 05 Fp PWM Carrier Frequency --- 20 Note 2: Logic operational for Vs from COM-8V to COM+250V. Logic state held for Vs from COM-8V to COM-VBS. Unit V V V V V kHz Static Electrical Characteristics (VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS. Symbol Description Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage 250 --- --- V TJ=25°C, ILK=250µA ILKH Leakage Current of High Side FET 0.5 µA TJ=25°C, VDS=250V ILKL RDS(on) Leakage Current of Low Side FET Plus Gate Drive IC Drain to Source ON Resistance --- --- 1 1.8 2.3 4.5 --- VSD VIN,th+ VIN,th- VCCUV+, VBSUV+ Mosfet Body Diode Forward Voltage Positive Going Input Threshold Negative Going Input Threshold VCC and VBS Supply Under-Voltage, Positive Going Threshold VCCUV-, VBSUV- VCC and VBS supply Under-Voltage, Negative Going Threshold VCCUVH, VBSUVH VCC and VBS Supply Under-Voltage Lock-Out Hysteresis IQBS IQBS, ON IQCC IQCC, ON IIN+ IIN- Quiescent VBS Supply Current VIN=0V Quiescent VBS Supply Current VIN=4V Quiescent VCC Supply Current VIN=0V Quiescent VCC Supply Current VIN=4V Input Bias Current VIN=4V Input Bias Current VIN=0V RBR Internal Bootstrap Equivalent Resistor Value Note 3: Characterized, not tested at manufacturing --- 0.8 2.2 --- --- --- 8 8.9 6.9 7.7 --- 1.2 --- 42 --- 42 --- 1.7 --- 1.8 --- 5.9 --- --- --- 250 --- --- 0.8 9.8 8.5 --- 60 60 4 4 18 2 --- µA TJ=25°C, VDS=250V Ω TJ=25°C, VCC=15V, Id=0.5A Ω TJ=150°C, VCC=15V, Id=0.5A (Note 3) V TJ=25°C, VCC=15V, ID=0.5A V V V V V µA µA mA mA µA VIN=3.3V µA VIN=0V Ω TJ=25°C 3 www.irf.com © 2014 International Rectifier November 24, 2014

No Preview Available ! IRSM505-024 IRSM515-024 Series Dynamic Electrical Characteristics (VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. Symbol Description Min Typ Max Units Conditions TON TOFF Input to Output Propagation Turn-On Delay Time Input to Output Propagation Turn-Off Delay Time --- 0.7 1.5 --- 0.8 1.5 µs ID=120mA, V+=30V See Fig.1 µs TFIL,IN Input Filter Time (HIN, LIN) DT Deadtime Inserted EON Turn-on switching energy loss EOFF Turn-off switching energy loss EREC Recovery energy loss EON,150 Turn-on switching energy loss EOFF,150 Turn-off switching energy loss EREC,150 Recovery energy loss Note 4: Characterized, not tested at manufacturing 200 300 --- 400 --- 11 --- 2 --- 3 --- 15 --- 3 --- 5 --- --- --- --- --- --- --- --- ns VIN=0 & VIN=3.3V ns VIN=0 & VIN=3.3V without external deadtime µJ µJ V+=150V, ID=0.5A, L=40mH, TC=25°C (Note 4) µJ µJ µJ V+=150V, ID=0.5A, L=40mH, TC=150°C (Note 4) µJ Thermal and Mechanical Characteristics Symbol Description Min Typ Max Units Conditions Rth(J-C) Junction to Case Thermal Resistance --- 9.7 --- °C/W High Side V-Phase Mosfet (Note 5) Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2. Internal NTC – Thermistor Characteristics (IRSM505-024 Only) Symbol R25 R125 B Description Resistance Resistance B-constant (25-50°C) Min Typ Max Units --- 47 --- kΩ --- 1.41 --- kΩ --- 4050 --- K Temperature Range Note 6: See application notes for usage -40 --- 125 °C Conditions TC=25°C, ±5% tolerance TC=125°C ±2% tolerance (Note 6) 4 www.irf.com © 2014 International Rectifier November 24, 2014

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IRSM515-024	Integrated Power Module	International Rectifier
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