IRSM505-044 Datasheet PDF - International Rectifier


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IRSM505-044
International Rectifier

Part Number IRSM505-044
Description Integrated Power Module
Page 15 Pages

IRSM505-044 datasheet pdf
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IRSM505-044
IRSM515-044 Series
1.0, 250V
Integrated Power Module for
Small Appliance Motor Drive Applications
Description
IRSM505-044 and IRSM515-044 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance
motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of
low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a
familiar package. The modules are optimized for low EMI characteristics.
IRSM505-044 includes temperature feedback while IRSM515-044 does not.
Features
250V 3-phase inverter including high voltage gate drivers
Integrated bootstrap functionality
Low 1.0(max, 25°C) RDS(on) Trench FREDFET
Under-voltage lockout for all channels
Matched propagation delay for all channels
Temperature feedback via NTC (IRSM505-044 only)
Optimized dV/dt for loss and EMI trade offs
Open-source for single and leg-shunt current sensing
3.3V logic compatible
Driver tolerant to negative transient voltage (-Vs)
Advanced input filter
Rugged design for PM fan and pump motors
Isolation 1900VRMS, 1min
Base Part Number
IRSM505-044
IRSM515-044
NTC
Yes
No
Package Type
SOP23
DIP23
DIP23A
SOP23
DIP23
DIP23A
Standard Pack
Form
Quantity
Tube
240
Tube
240
Tube
240
Tube
240
Tube
240
Tube
240
Orderable Part Number
IRSM505-044PA
IRSM505-044DA
IRSM505-044DA2
IRSM515-044PA
IRSM515-044DA
IRSM515-044DA2
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Internal Electrical Schematic
IRSM505-044
IRSM515-044 Series
1 COM
2 VB1
3 VCC1
4 HIN1
5 LIN1
6 NC
7 VB2
8 VCC2
9 HIN2
10 LIN 2
11 VTH
12 VB3
13 VCC3
14 HIN3
15 LIN 3
16 NC
Half-Bridge
HVIC
Integrated in HVIC
Half-Bridge
HVIC
Half-Bridge
HVIC
IRSM505-044
17 V+
18 U/VS1
19 VR1
20 VR2
21 V/VS2
22 VR3
23 W/VS3
1 COM
2 VB1
3 VCC1
4 HIN1
5 LIN1
6 NC
7 VB2
8 VCC2
9 HIN2
10 LIN 2
11 NC
12 VB3
13 VCC3
14 HIN3
15 LIN 3
16 NC
Half-Bridge
HVIC
Integrated in HVIC
Half-Bridge
HVIC
Half-Bridge
HVIC
IRSM515-044
17 V+
18 U/VS1
19 VR1
20 VR2
21 V/VS2
22 VR3
23 W/VS3
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at
manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table.
Symbol
Description
Min Max Unit
BVDSS
MOSFET Blocking Voltage
IO @ TC=25°C
DC Output Current per MOSFET
IOP @ TC =25°C
Pulsed Output Current per MOSFET (Note 1)
Pd @ TC=25°C
Maximum Power Dissipation per MOSFET
VISO Isolation Voltage (1min)
TJ Operating Junction Temperature
TC Operating Case Temperature
TS Storage Temperature
VS1,2,3
High Side Floating Supply Offset Voltage
VB1,2,3
High Side Floating Supply Voltage
VCC Low Side and Logic Supply voltage
VIN Input Voltage of LIN, HIN
Note 1: Pulse Width = 100µs, Single Pulse
---
---
---
---
---
-40
-40
-40
VB1,2,3 - 20
-0.3
-0.3
COM -0.3
250
3.0
15
16
1900
150
150
150
VB1,2,3 +0.3
275
25
VCC+0.3
V
A
W
VRMS
°C
°C
°C
V
V
V
V
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IRSM505-044
IRSM515-044 Series
Recommended Operating Conditions
Symbol
Description
Min Max
V+ Positive DC Bus Input Voltage
--- 200
VS1,2,3
High Side Floating Supply Offset Voltage
(Note 2)
200
VB1,2,3
High Side Floating Supply Voltage
VS+12
VS+20
VCC Low Side and Logic Supply Voltage
13.5 16.5
VIN Input Voltage of LIN, HIN, ITRIP, EN, FLT
05
Fp PWM Carrier Frequency
--- 20
Note 2: Logic operational for Vs from COM-8V to COM+250V. Logic state held for Vs from COM-8V to COM-VBS.
Unit
V
V
V
V
V
kHz
Static Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to COM and
are applicable to all six channels. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Symbol
Description
Min Typ Max Units Conditions
BVDSS
Drain-to-Source Breakdown Voltage
250 ---
---
V TJ=25°C, ILK=250µA
ILKH Leakage Current of High Side FET
0.5 µA TJ=25°C, VDS=250V
ILKL
RDS(on)
Leakage Current of Low Side FET Plus
Gate Drive IC
Drain to Source ON Resistance
---
---
1
0.8 1.0
1.8 ---
VSD
VIN,th+
VIN,th-
VCCUV+,
VBSUV+
Mosfet Body Diode Forward Voltage
Positive Going Input Threshold
Negative Going Input Threshold
VCC and VBS Supply Under-Voltage,
Positive Going Threshold
--- 0.8 ---
2.2 ---
---
--- --- 0.8
8 8.9 9.8
VCCUV-,
VBSUV-
VCC and VBS supply Under-Voltage,
Negative Going Threshold
6.9 7.7 8.5
VCCUVH,
VBSUVH
IQBS
IQBS, ON
IQCC
IQCC, ON
IIN+
IIN-
RBR
VCC and VBS Supply Under-Voltage
Lock-Out Hysteresis
--- 1.2 ---
Quiescent VBS Supply Current VIN=0V --- 42 60
Quiescent VBS Supply Current VIN=4V --- 42 60
Quiescent VCC Supply Current VIN=0V --- 1.7
4
Quiescent VCC Supply Current VIN=4V --- 1.8
4
Input Bias Current VIN=4V
--- 5.9 18
Input Bias Current VIN=0V
--- ---
2
Internal Bootstrap Equivalent Resistor
Value
--- 250
---
Note 3: Characterized, not tested at manufacturing
µA TJ=25°C, VDS=250V
TJ=25°C, VCC=15V, Id=1.0A
TJ=150°C, VCC=15V, Id=1.0A
(Note 3)
V TJ=25°C, VCC=15V, ID=1.0A
V
V
V
V
V
µA
µA
mA
mA
µA VIN=3.3V
µA VIN=0V
TJ=25°C
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IRSM505-044
IRSM515-044 Series
Dynamic Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified.
Symbol Description
Min Typ
TON
Input to Output Propagation Turn-On
Delay Time
--- 0.7
TOFF
Input to Output Propagation Turn-Off
Delay Time
TFIL,IN
Input Filter Time (HIN, LIN)
DT Deadtime Inserted
EON Turn-on switching energy loss
EOFF
Turn-off switching energy loss
EREC
Recovery energy loss
EON,150 Turn-on switching energy loss
EOFF,150 Turn-off switching energy loss
EREC,150 Recovery energy loss
Note 4: Characterized, not tested at manufacturing
--- 0.8
200 300
--- 400
--- 11
--- 3
--- 3
--- 15
--- 4
--- 5
Max
1.5
1.5
---
---
---
---
---
---
---
---
Units Conditions
µs
ID=120mA, V+=30V
See Fig.1
µs
ns VIN=0 & VIN=3.3V
ns
VIN=0 & VIN=3.3V without
external deadtime
µJ
µJ
V+=150V, ID=0.5A, L=40mH,
TC=25°C (Note 4)
µJ
µJ
µJ
V+=150V, ID=0.5A, L=40mH,
TC=150°C (Note 4)
µJ
Thermal and Mechanical Characteristics
Symbol Description
Min Typ Max Units Conditions
Rth(J-C)
Junction to Case Thermal Resistance
---
7.9
---
°C/W
High Side V-Phase Mosfet
(Note 5)
Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2.
Internal NTC – Thermistor Characteristics (IRSM505-044 Only)
Symbol Description
Min Typ Max Units
R25 Resistance
R125
Resistance
B B-constant (25-50°C)
--- 47 --- k
--- 1.41 --- k
---
4050
---
K
Temperature Range
Note 6: See application notes for usage
-40 --- 125 °C
Conditions
TC=25°C, ±5% tolerance
TC=125°C
±2% tolerance (Note 6)
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© 2014 International Rectifier Submit Datasheet Feedback
May 19, 2014




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