IRS2005SPBF Datasheet PDF - International Rectifier

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IRS2005SPBF
International Rectifier

Part Number IRS2005SPBF
Description High and Low Side Driver
Page 19 Pages


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IRS2005(S,M)PBF
Features
Gate drive supplies up to 20V per channel
Undervoltage lockout for VCC, VBS
3.3 V, 5V , 15V input logic compatible
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Matched propagation delays
Output in phase with the Inputs
-40°C to 125°C operating range
RoHS compliant
High and Low Side Driver
Product Summary
VOFFSET
VOUT
Io+ & I o- (typ.)
tON & tOFF (typ.)
Delay matching (max.)
≤ 200V
10 V 20V
290mA & 600mA
160ns & 150ns
50ns
Description
Package Options
The IRS2005 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side
referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed
for minimum driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET or IGBT
in the high side configuration which operates up to 200 V.
Propagation delays are matched to simplify the HVIC’s use
in high frequency applications.
8-Lead SOIC
Typical Applications
16-Lead MLPQ 4x4
(without 2 leads)
Appliance motor drives
Servo drives
Micro inverter drives
General purpose three phase inverters
Base Part Number
IRS2005SPBF
IRS2005MPBF
Package Type
8-Lead SOIC
14-Lead MLPQ 4x4
Standard Pack
Form
Tube/Bulk
Quantity
95
Tape and Reel
2500
Tape and Reel
3000
Orderable Part Number
IRS2005SPBF
IRS2005STRPBF
IRS2005MTRPBF
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Typical Connection Diagram
VCC
VCC
VB
HIN HIN HO
LIN LIN VS
COM
LO
IRS2005(S,M)PBF
Up to 200V
To Load
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer tour
Application Notes & DesignTips for proper circuit board layout.
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IRS2005(S,M)PBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions.
Symbol
VCC
VIN
VB
VS
VHO
VLO
COM
dVS/dt
PD
RthJA
TJ
TS
TL
Definition
Low side supply voltage
Logic input voltage
High-side floating well supply voltage
High-side floating well supply return voltage
Floating gate drive output voltage
Low-side output voltage
Power ground
Allowable VS offset supply transient relative to COM
Package power dissipation @ TA
+25ºC
8-Lead SOIC
14-Lead MLPQ 4x4
Thermal resistance, junction to
ambient
8-Lead SOIC
14-Lead MLPQ 4x4
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
All supplies are tested at 25V.
Min.
-0.3
COM - 0.3
-0.3
VB- 25
VS - 0.3
COM - 0.3
VCC - 25
-55
Max.
25
VCC + 0.3
225
VB + 0.3
VB + 0.3
VCC + 0.3
VCC + 0.3
50
0.625
2.08
200
36
150
150
300
Units
V
V/ns
W
ºC/W
ºC
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (VCC - COM) = (VB
- VS) = 15V.
Symbol
VCC
VIN
VB
VS
VHO
VLO
COM
TA
Definition
Low-side supply voltage
Logic input voltage
High-side floating well supply voltage
High-side floating well supply offset voltage
Floating gate drive output voltage
Low-side output voltage
Power ground
Ambient temperature
Min
10
0
VS + 10
COM - 8
Vs
COM
-5
-40
Max
20
VCC
VS + 20
200
VB
VCC
5
125
Units
V
ºC
Logic operation for VS of 8 V to 200 V. Logic state held for VS of 8 V to VBS. Please refer to Design Tip DT97-3
for more details.
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IRS2005(S,M)PBF
Static Electrical Characteristics
(VCC - COM) = (VB - VS) = 15V. TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM. The
VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO.
The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Symbol
VBSUV+
VBSUV-
VBSUVHY
VCCUV+
VCCUV-
VCCUVHY
ILK
IQBS
IQCC
VOH
VOL
Io+
Definition
VBS supply undervoltage positive going threshold
VBS supply undervoltage negative going threshold
VBS supply undervoltage hysteresis
VCC supply undervoltage positive going threshold
VCC supply undervoltage negative going threshold
VCC supply undervoltage hysteresis
High-side floating well offset supply leakage
Quiescent VBS supply current
Quiescent VCC supply current
High level output voltage drop, VBIAS-VO
Low level output voltage drop, VO
Output high short circuit pulsed current
Io- Output low short circuit pulsed current
VIH Logic “1” input voltage
VIL Logic “0” input voltage
IIN+ Input bias current (HO = High)
IIN- Input bias current (HO = Low)
Min.
8.0
7.4
8.0
7.4
200
420
2.5
Typ.
8.9
8.2
0.7
8.9
8.2
0.7
45
300
0.05
0.02
290
600
3
Max.
9.8
9
9.8
9
50
75
520
0.2
0.1
0.8
10
5
Units
V
µA
V
mA
V
µA
Test Conditions
VB = VS = 200V
All inputs are in the
off state
IO = 2 mA
VO = 0V, VIN = 0V
PW ≤ 10µs
VO = 15V, VIN = 5V
PW ≤ 10µs
VIN = 5V
VIN = 0V
Dynamic Electrical Characteristics
VCC = VB = 15V, VS = COM, TA = 25oC, and CL = 1000pF unless otherwise specified.
Symbol
tON
tOFF
tR
tF
tFIL
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Minimum pulse input filter time
Delay matching time (tON, tOFF)
Min.
Typ.
160
150
70
30
300
Max.
220
220
170
90
50
Units
ns
Test Conditions
VS = 0V or 200V
VS = 0V
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August 4, 2015



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