IRLSL4030PBF Datasheet PDF - International Rectifier


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IRLSL4030PBF
International Rectifier

Part Number IRLSL4030PBF
Description 100V Single N-Channel HEXFET Power MOSFET
Page 10 Pages

IRLSL4030PBF datasheet pdf
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Applications
wwllw.dHDatiCagshhMeEeotf4tfouic.rcieoDmnrcivyeSynchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G
PD - 97370
IRLS4030PbF
IRLSL4030PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ. 3.4m
max. 4.3m
S ID
180A
GDS
D2Pak
IRLS4030PbF
GDS
TO-262
IRLSL4030bF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case jk
RθJA Junction-to-Ambient (PCB Mount) ij
G
Gate
D
Drain
S
Source
Max.
180
130
730
370
2.5
± 16
21
-55 to + 175
300
305
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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IRLS/SL4030PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
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VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.10 ––– V/°C Reference to 25°C, ID = 5mAc
––– 3.4 4.3 mVGS = 10V, ID = 110A f
––– 3.6 4.5
VGS = 4.5V, ID = 92A f
1.0 ––– 2.5 V VDS = VGS, ID = 250µA
––– ––– 20
––– ––– 250
µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
RG(int)
Internal Gate Resistance
––– 2.1 –––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
320
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
–––
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)h –––
Effective Output Capacitance (Time Related)g –––
–––
87
27
45
42
74
330
110
170
11360
670
290
760
1140
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 25V, ID = 110A
ID = 110A
nC
VDS = 50V
VGS = 4.5V f
ID = 110A, VDS =0V, VGS = 4.5V
VDD = 65V
ns
ID = 110A
RG = 2.7
VGS = 4.5V f
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V h
VGS = 0V, VDS = 0V to 80V g
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
––– ––– 730
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3 V TJ = 25°C, IS = 110A, VGS = 0V f
–––
–––
50
60
–––
–––
ns
TJ = 25°C
TJ = 125°C
VR = 85V,
IF = 110A
–––
–––
88 –––
130 –––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs f
––– 3.3 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.05mH
RG = 25, IAS = 110A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 110A, di/dt 1330A/µs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
2
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
‰ RθJC value shown is at time zero.
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1000
100
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TOP
BOTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
10
1
0.1
2.5V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
TJ = 25°C
10
VDS = 50V
60µs PULSE WIDTH
1.0
12345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
IRLS/SL4030PbF
TOP
BOTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.5V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
2.5
ID = 110A
2.0 VGS = 10V
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
5.0
ID= 110A
4.0
VDS= 80V
VDS= 50V
3.0
2.0
1.0
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRLS/SL4030PbF
1000
TJ = 175°C
100
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10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
175
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-20 0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
100
10msec
10 DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
1msec
10 100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP
17A
40A
BOTTOM 110A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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