IRLMS1503PBF-1 Datasheet PDF - International Rectifier

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IRLMS1503PBF-1
International Rectifier

Part Number IRLMS1503PBF-1
Description Power MOSFET
Page 8 Pages


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VDS
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30
0.10
0.20
6.4
3.2
V
Ω
nC
A
Features
Industry-standard pinout Micro-6 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRLMS1503PbF-1
HEXFET® Power MOSFET
D1
A
6D
D2
5D
G3
4S
Top View
Micro6
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLMS1503TRPbF-1
Package Type
Micro6
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLMS1503TRPbF-1
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
3.2
2.6
18
1.7
13
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max
75
Units
°C/W
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IRLMS1503PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.037 –––
––– ––– 0.100
––– ––– 0.20
V/°C
Ω
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.2A ƒ
VGS = 4.5V, ID = 1.1A ƒ
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance
1.1 ––– ––– S VDS = 10V, ID = 1.1A
IDSS Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg Total Gate Charge
––– 6.4 9.6
ID = 2.2A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– 1.1 1.7
––– 1.9 2.8
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
––– 4.6 –––
VDD = 15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 4.4 ––– ns ID = 2.2A
––– 10 –––
RG = 6.0Ω
––– 2.0 –––
RD = 6.7Ω, See Fig. 10 ƒ
Ciss Input Capacitance
––– 210 –––
VGS = 0V
Coss Output Capacitance
––– 90 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 32 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 1.7
––– 18
––– 1.2
36 54
39 58
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V ƒ
TJ = 25°C, IF = 2.2A
di/dt = 100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD 2.2A, di/dt 150A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 5sec.
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IRLMS1503PbF-1
100
10
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM3.0V
100
10
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM3.0V
1
3.0V
0.1
0.1
20μs PULSE WIDTH
TJ = 25 °C
1
VDS , Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
1 3.0V
0.1
0.1
20μs PULSE WIDTH
TJ = 150°C
1
VDS , Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
100 2.0 ID = 2.2A
TJ = 25° C
10
TJ = 150° C
1
0.1
3.0
VDS= 10V
20μs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature( °C)
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLMS1503PbF-1
350
300
250
200
150
100
50
0
1
VCGissS
= 0V,
= Cgs
f = 1MHz
+ Cgd , Cds
SHORTED
CCrossss
=
=
CCgdds
+
Cgd
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 2.2A
16
12
VVDDSS
=
=
24V
15V
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0 2 4 6 8 10
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
TJ = 25° C
1
0.1
0.4
VGS = 0 V
0.6 0.8 1.0 1.2 1.4
VSD ,Source-to-Drain Voltage (V)
1.6
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
10ms
TTJC
=
=
25° C
150° C
Single Pulse
0.1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
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