IRL610 Datasheet PDF - Fairchild Semiconductor

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IRL610
Fairchild Semiconductor

Part Number IRL610
Description Power MOSFET
Page 7 Pages


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$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 200V
Lower RDS(ON):1.185(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
IRL610
BVDSS = 200 V
RDS(on) = 0.046
ID = 3.3 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
200
3.3
2.1
12
±20
29
3.3
3.3
5.0
33
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
3.81
--
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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IRL610
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Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
200 -- -- V
-- 0.19 -- V/°C
1.0 -- 2.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
-- -- 1.5
-- 1.9 --
-- 185 240
-- 35 45 pF
-- 14 20
-- 9 30
-- 9 30
ns
-- 20 50
-- 6 20
-- 6.1 9
-- 1.4 -- nC
-- 2.8 --
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=20V
VGS=-20V
VDS=200V
VDS=160V,TC=125°C
VGS=5V,ID=1.65A
(4)
VDS=40V,ID=1.65A (4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=3.3A,
RG=22
See Fig 13
(4) (5)
VDS=160V,VGS=5V,
ID=3.3A
See Fig 6 & Fig 12
(4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 3.3
Integral reverse pn-diode
A
-- 12
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=3.3A,VGS=0V
-- 123 -- ns TJ=25°C,IF=3.3A
-- 0.38 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=4mH, IAS=3.3A, VDD=50V, RG=27, Starting TJ =25 °C
(3) ISD 3.3A, di/dt 140A/µs, VDD BVDSS , Starting TJ =25 °C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature
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Fig 1. Output Characteristics
101
V
GS
Top : 7.0V
6.0V
5.5V
5.0V
4.5V
100
4.0V
3.5V
Bottom : 3.0V
10-1
10-1
@ Notes :
1. 250µs Pulse Test
2. T = 25 oC
C
100 101
V , Drain-Source Voltage [V]
DS
Fig 3. On-Resistance vs. Drain Current
4
3
V =5V
GS
2
1
V = 10 V
@ Note : T = 25 oC
J
GS
0
0 2 4 6 8 10
I , Drain Current [A]
D
Fig 5. Capacitance vs. Drain-Source Voltage
300
240 C iss
Ciss= Cgs+ Cgd (Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
180
120 C oss
60 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRL610
Fig 2. Transfer Characteristics
101
100 150 oC
25 oC
10-1
0
- 55oC
@ Notes :
1. V = 0 V
GS
2. V = 40 V
DS
3. 250 µs Pulse Test
2468
V , Gate-Source Voltage [V]
GS
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
0.4
150 oC
25 oC
@ Notes :
1. V = 0 V
GS
2. 250 µs Pulse Test
0.6 0.8 1.0 1.2
V , Source-Drain Voltage [V]
SD
1.4
Fig 6. Gate Charge vs. Gate-Source Voltage
6
V = 40 V
DS
V =100 V
DS
V = 160 V
DS
4
2
@ Notes : I = 3.3 A
D
0
0246
Q , Total Gate Charge [nC]
G
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IRL610
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes :
1. V = 0 V
GS
2.
I
D
= 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
T , Junction Temperature [oC]
J
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Fig 8. On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
@ Notes :
0.5 1. VGS = 5 V
2. ID = 1.65 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
101
100
10-1
10-2
10-310-1
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
DC
100 101 102
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Ambient Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125 150
TA , Ambient Temperature [oC]
Fig 11. Thermal Response
102
D=0.5
0.2
101
0.1
0.05
0.02
100 0.01
single pulse
@ Notes :
1. Z (t)=69.4 o C/W Max.
θJA
2. Duty Factor, D=t /t
12
3. T -T =P *Z (t)
JM A DM θJA
PDM
t1
t2
10-
1
10-
5
10- 4
10- 3
10- 2
10- 1
100
101
102
t , Square Wave Pulse Duration [sec]
1
103
4



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