IRL1104LPBF Datasheet PDF - International Rectifier

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IRL1104LPBF
International Rectifier

Part Number IRL1104LPBF
Description HEXFET Power MOSFET
Page 10 Pages


IRL1104LPBF datasheet pdf
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l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL1104S)
l Low-profile through-hole (IRL1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
PD -95576
IRL1104SPbF
IRL1104LPbF
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.008
ID = 104A†
S
D 2 Pak
TO-262
Max.
104†
74†
416
2.4
167
1.1
±16
340
62
17
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.9
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/19/04



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IRL1104S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.04 ––– V/°C Reference to 25°C, ID =1mA…
––– ––– 0.008
VGS = 10V, ID = 62A „
––– ––– 0.012 W VGS = 4.5V, ID = 52A „
1.0 –––
53 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 62A…
––– ––– 25
––– ––– 250
µA VDS =40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 68
ID =62A
––– ––– 24
––– ––– 34
nC VDS = 32V
VGS = 4.5V, See Fig. 6 and 13 „…
––– 18 –––
VDD = 20V
––– 257 –––
––– 32 –––
––– 64 –––
ID =54A
RG = 3.6, VGS = 4.5V
RD = 0.4, See Fig. 10 „…
––– 7.5 ––– nH Between lead,
and center of die contact
––– 3445 –––
VGS = 0V
––– 1065 ––– pF VDS = 25V
––– 270 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 104†
A
––– ––– 416
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS =62A, VGS = 0V „
––– 84 126 ns TJ = 25°C, IF =62A
––– 223 335 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width 300µs; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 0.18mH
RG = 25, IAS = 62A. (See Figure 12)
… Uses IRL1104 data and test conditions.
† Calculated continuous current based on maximum allowable
ƒ ISD 62A, di/dt 217A/µs, VDD V(BR)DSS,
TJ 175°C
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRL1104S/LPbF
1000
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
1000
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.7V
10
20µs PULSE WIDTH
TJ= 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175° C
10
V DS= 2550V
20µs PULSE WIDTH
1
2.0 4.0 6.0 8.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 ID = 104A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3



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IRL1104S/LPbF
6000
5000
4000
3000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
0
1
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = 62 A
8
VDS = 32V
VDS = 20V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 TJ = 175°C
10
TJ = 25 °C
1
0.1
0.2
VGS = 0 V
0.8 1.4 2.0
VSD ,Source-to-Drain Voltage (V)
2.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
100
10us
100us
1ms
10 10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
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