IRK.71 Datasheet PDF - International Rectifier

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IRK.71
International Rectifier

Part Number IRK.71
Description (IRK.71/.91) THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
Page 10 Pages


IRK.71 datasheet pdf
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Bulletin I27132 rev. I 09/04
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
IRK.71, .91 SERIES
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
75 A
95 A
Mechanical Description
The Generation V of Add-A-pak module combine the
The electrical terminals are secured against axial pull-out:
excellent thermal performance obtained by the usage
they are fixed to the module housing via a click-stop
of Direct Bonded Copper substrate with superior
feature already tested and proved as reliable on other IR
mechanical ruggedness, thanks to the insertion of a
modules.
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on twhwew.DataSheet4U.com
majority of heatsink with increased tolerance of surface
Electrical Description
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
direct stress on the leads.
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters IRK.71 IRK.91
Units
IT(AV) or IF(AV)
@ 85°C
75
95
A
IO(RMS) (*)
ITSM @ 50Hz
IFSM @ 60Hz
I2t @ 50Hz
165
1665
1740
13.86
210
1785
1870
15.91
@ 60Hz
I2t
12.56
138.6
14.52
159.1
VRRM range
TSTG
TJ
(*) As AC switch.
400 to 1600
- 40 to 125
- 40 to125
A
A
A
KA2s
KA2s
KA2s
V
oC
oC
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
VRRM , maximum
repetitive
peak reverse voltage
V
400
VRSM , maximum VDRM , max. repetitive
non-repetitive peak off-state voltage,
peak reverse voltage gate open circuit
VV
500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000
1100
1000
12 1200
1300
1200
14 1400
1500
1400
16 1600
1700
1600
IRRM
IDRM
125°C
mA
15
On-state Conduction
Parameters
IRK.71
IRK.91
Units Conditions
IT(AV)
IF(AV)
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
75
95
180o conduction, half sine wave,
TC = 85oC
IO(RMS)
Max. continuous RMS
on-state current.
As AC switch
ITSM Max. peak, one cycle
or non-repetitive on-state
IFSM or forward current
165
1665
1740
1400
1470
210
1785
1870
1500
1570
A
I(RMS) or
I(RMS)
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
Sinusoidal
half wave,
Initial TJ = TJ max.
I2 t Max. I2t for fusing
1850
1940
13.86
2000
2100
15.91
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
t=10ms No voltage
12.56
9.80
8.96
14.52
11.25
10.27
KA2s
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
Initial TJ = TJ max.
I2t Max. I2t for fusing (1)
17.11
15.60
138.6
20.00
18.30
159.1
KA2s
t=10ms TJ = 25oC,
t= 8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied,TJ = TJ max
VT(TO) Max. value of threshold
voltage (2)
0.82
0.85
0.80
0.85
Low level (3)
V High level (4)
TJ = TJ max
rt Max. value of on-state
slope resistance (2)
3.00
2.90
2.40
2.25
Low level (3)
mHigh level (4)
TJ = TJ max
VTM Max. peak on-state or
VFM forward voltage
di/dt Max. non-repetitive rate
of rise of turned on
current
IH Max. holding current
1.59 1.58
150
250
V
A/µs
mA
ITM = π x IT(AV)
IFM = π x IF(AV)
TJ = 25°C
TJ = 25oC, from 0.67 VDRM,
ITM =π x ,IT(AV) Ig = 500mA,
tr < 0.5 µs, tp > 6 µs
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
IL Max. latching current
400
TJ = 25oC, anode supply = 6V, resistive load
(1) I2t for time tx = I2t x tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV
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Triggering
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Parameters
PGM Max. peak gate power
PG(AV) Max. average gate power
IGM
-VGM
Max. peak gate current
Max. peak negative
gate voltage
VGT Max. gate voltage
required to trigger
IGT Max. gate current
required to trigger
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
Blocking
IRK.71
12
3.0
3.0
IRK.91
12
3.0
3.0
10
4.0
2.5
1.7
270
150
80
0.25
6
Units
W
A
Conditions
V
TJ = - 40°C
TJ = 25°C
TJ = 125°C
Anode supply = 6V
resistive load
TJ = - 40°C
Anode supply = 6V
mA
TJ = 25°C
resistive load
TJ = 125°C
V
TJ = 125oC,
rated VDRM applied
mA
TJ = 125oC,
rated VDRM applied
Parameters
IRK.71
IRK.91
Units
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
VINS RMS isolation voltage
15
2500 (1 min)
3500 (1 sec)
mA
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Conditions
TJ = 125 oC, gate open circuit
50 Hz, circuit to base, all terminals
shorted
TJ = 125oC, linear to 0.67 VDRM,
gate open circuit
Parameters
IRK.71
IRK.91
Units
Conditions
TJ Junction operating
temperature range
Tstg
RthJC
Storage temp. range
Max. internal thermal
resistance, junction
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar
wt Approximate weight
- 40 to 125
- 40 to 125
0.165
0.135
0.1
5
3
110 (4)
°C
K/W
Nm
gr (oz)
Per module, DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
Case style
TO-240AA
JEDEC
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
180o
Sine half wave conduction
120o
90o
60o 30o
180o
Rect. wave conduction
120o 90o 60o
30o
Units
IRK.71 0.06 0.07 0.09
IRK.91 0.04 0.05 0.06
0.12 0.18
0.08 0.12
0.04 0.08
0.03 0.05
0.10
0.06
0.13
0.08
0.18
0.12
°C/W
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Ordering Information Table
Device Code
IRK T 91 / 16 A S90
IRK.92 types
With no auxiliary cathode
123
456
1 - Module type
2 - Circuit configuration (See Circuit Configuration table below)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - A : Gen V
6 - dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
* * Available with no auxiliary cathode.
To specify change: 71 to 72
91 to 92
e.g. : IRKT92/16A etc.
IRKT
(1)
~
Dimensions are in millimeters and [inches]
IRKH
IRKL
(1) (1)
~~
IRKN
(1)
-
+ ++
(2) (2) (2)
+
(2)
-
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
-
(3)
G1 K1
(4) (5)
-
(3)
K2 G2
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
+
(3)
G1 K1
(4) (5)
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IRK.71 (IRK.71/.91) THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR IRK.71
International Rectifier
IRK.71 pdf

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