IRK.250 Datasheet PDF - International Rectifier

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IRK.250
International Rectifier

Part Number IRK.250
Description (IRK. Series) SCR / SCR and SCR / DIODE
Page 6 Pages


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Bulletin I27102 rev. C 05/02
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
3000 VRMS isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
IRK. SERIES
MAGN-A-pakPower Modules
170A
230A
250A
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing com-
mon heatsinks and compact assemblies to be buwwilwt..DTatahSeheyet4U.com
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose appli-
cations such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
IRK.170.. IRK.230.. IRK.250.. Units
IT(AV) @ 85°C
IT(RMS)
ITSM @ 50Hz
@ 60Hz
I2t @ 50Hz
@ 60Hz
I2t
170
377
5100
5350
131
119
1310
230
510
7500
7850
280
256
2800
250
555
8500
8900
361
330
3610
A
A
A
A
KA2s
KA2s
KA2s
VDRM / VRRM
TJ range
Up to1600 Up to 2000 Up to1600 V
-40 to 130
oC
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.170-
IRK.250-
IRK.230-
Voltage
Code
04
08
12
14
16
08
12
16
18
20
VRRMVDRM , maximum
repetitive peak reverse and
off-state blocking voltage
V
400
800
1200
1400
1600
800
1200
1600
1800
2000
VRSM , maximum non-repetitive
peak reverse voltage
V
500
900
1300
1500
1700
900
1300
1700
1900
2100
IRRM IDRM max
@ 130°C
mA
50
50
On-state Conduction
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
IT(AV) Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS on -state current
ITSM Maximum peak, one-cycle on-state,
non-repetitive surge current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1Low level value of threshold voltage
VT(TO)2High level value of threshold voltage
rt1 Low level on-state slope resistance
rt2 High level on-state slope resistance
VTM Maximum on-state voltage drop
170
85
377
5100
5350
4300
4500
131
119
92.5
84.4
1310
0.89
1.12
1.34
0.96
1.60
IH Maximum holding current
IL Maximum latching current
500
1000
230
85
510
7500
7850
6300
6600
280
256
198
181
2800
1.03
1.07
0.77
0.73
1.59
500
1000
250
85
555
8500
8900
7150
7500
361
330
255
233
3610
0.97
1.00
0.60
0.57
1.44
500
1000
A 180o conduction, half sine wave
oC
A as AC switch
A t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied Sinusoidal half wave,
KA2s t = 10ms No voltage initial TJ = TJ max
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
KA2s t = 0.1 to 10ms, no voltage reapplied
V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
m(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V ITM = π x IT(AV), TJ = TJ max., 180o conduction
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
mA Anode supply=12V, initial IT=30A, TJ=25oC
Anode supply=12V, resistive load=1
gate pulse: 10V, 100µs, TJ = 25°C
Switching
Parameters
td Typical delay time
tr Typical rise time
tq Typical turn-off time
IRK.170 IRK.230 IRK.250 Units Conditions
1.0
2.0
50 - 150
µs TJ = 25oC, Gate Current=1A dIg/dt=1A/µs
Vd = 0,67% VDRM
µs ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Blocking
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
IRRM Max. peak reverse and off-state
IDRM leakage current
VINS RMS isolation voltage
dv/dt Critical rate of rise of off-state voltage
50
3000
1000
mA TJ=TJ max.
V 50Hz, circuit to base, all termin. shorted, 25°C,1s
V/µs TJ = TJ max, exponential to 67% rated VDRM
Triggering
Parameters
I PGM Maximum peak gate power
PG(AV) Maximum average gate power
+IGM Maximum peak gate current
-VGT Max. peak negative gate voltage
VGT Maximum required DC gate
voltage to trigger
IGT Maximum required DC gate
current to trigger
VGD Maximum gate voltage
that will not trigger
IGD Maximum gate current
that will not trigger
di/dt Max rate of rise of
turned-on current
IRK.170 IRK.230 IRK.250 Units Conditions
10.0
W tp 5ms, TJ = TJ max.
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
W f = 50Hz, TJ = TJ max.
A tp 5ms, TJ = TJ max.
V tp 5ms, TJ = TJ max.
V TJ = - 40oC Anode supply = 12V, resistive
V TJ = 25oC load ; Ra = 1
V TJ = TJ max.
mA TJ = - 40oC Anode supply = 12V, resistive
mA TJ = 25oC load ; Ra = 1
mA TJ = TJ max.
V @ TJ= TJ max., rated VDRM applied
10.0
mA @ TJ= TJ max., rated VDRM applied
500 A/µs @ TJ= TJ max., ITM = 400 A rated VDRM applied
Thermal and Mechanical Specifications
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
TJ Junction operating temperature
Tstg Storage temperature range
RthJC Maximum thermal resistance
junction to case
RthC-S Thermal resistance, case to heatsink
T Mounting tourque ±10%
MAP to heatsink
Busbar to MAP
wt Approximate weight
Case style
-40 to 130
-40 to 150
oC
oC
0.17 0.125 0.125 K/W Per junction, DC operation
0.02 0.02 0.02
4 to 6
4 to 6
500
17.8
MAGN-A-pak
K/W Mounting surface flat, smooth and greased
(per module)
A mounting compound is recommended and the
Nm tourque should be rechecked after a period of
Nm about 3 hours to allow for the spread of the
compound
g
oz
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
Sinusoidal conduction @ TJ max.
180o
120o
90o
60o
30o
Rectangular conduction @ TJ max.
180o
120o
90o
60o
30o
Units
IRK.170-
0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
IRK.230-
0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033
IRK.250-
0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
MAGN-A-paks Suitable for Current Source Inverters
Thyristor
VDRM
VRRM
1400
VRSM
1500
Diode
VRRM
VRSM
2000
170A
@ 85°C
IRKH170-14D20
IT(AV) / IF(AV) @ TC
230A
@ 85°C
IRKH230-14D20
1400
1500
2000
IRKL170-14D20
IRKL230-14D20
1600
1700
2500
IRKH170-16D25
IRKH230-16D25
1600
1700
2500
IRKL170-16D25
IRKL230-16D25
1800
1900
2800
Not Available
IRKH230-18D28
1800
1900
2800
Not Available
IRKL230-18D28
2000
2100
3200
Not Available
IRKH230-20D32
2000
2100
3200
Not Available
IRKL230-20D32
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
250A
@ 85°C
IRKH250-14D20
IRKL250-14D20
IRKH250-16D25
IRKL250-16D25
Not Available
Not Available
Not Available
Not Available
Application Notes
3xIRKL...
M
3xIRKH...
3xIRKT...
Current Source Inverter using 9 MAGN-A-paks
Current Source Inverters
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as op-
posed to Fast) Thyristors and Diodes.
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation induc-
tances and limited fault currents.
Their simple construction, illustrated by the circuit on
the left, is further enhanced by the use of MAGN-A-
paks which allow the power circuit of an Inverter to be
realised with 6 capacitors and 9 MAGN-A-paks all
mounted on just one heatsink.
The optimal design of Current Source Inverters re-
quires the use of Diodes with blocking voltages greater
than those of the thyristors .
This departure from conventional half-bridge modules
is catered for by MAGN-A-pak range with Thyristors up
to 2000V and Diodes up to 3200V.
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Related : Start with IRK.25 Part Numbers by
IRK.250 (IRK. Series) SCR / SCR and SCR / DIODE IRK.250
International Rectifier
IRK.250 pdf

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