IRG4BC10SDPBF Datasheet PDF - International Rectifier

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IRG4BC10SDPBF
International Rectifier

Part Number IRG4BC10SDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Page 10 Pages


IRG4BC10SDPBF datasheet pdf
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PD -94904
IRG4BC10SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Standard Speed CoPack
IGBT
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
• Lead-Free
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
14
8.0
18
18
4.0
18
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0(0.07)
Max.
3.3
7.0
–––
80
–––
Units
°C/W
g (oz)
1
12/23/03



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IRG4BC10SDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance„
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
600
3.0
3.65
—— V
0.64 — V/°C
1.58 1.7
2.05 — V
1.68 —
— 6.0
-9.5 — mV/°C
5.48 — S
— 250 µA
— 1000
1.5 1.8 V
1.4 1.7
— ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 8.0A
VGE = 15V
IC = 14.0A
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Details of note  through „ are on the last page
2
— 15 22
IC = 8.0A
— 2.42 3.6 nC VCC = 400V
See Fig. 8
— 6.53 9.8
VGE = 15V
— 76 —
TJ = 25°C
— 32 — ns IC = 8.0A, VCC = 480V
— 815 1200
VGE = 15V, RG = 100
— 720 1080
Energy losses include "tail" and
— 0.31 —
diode reverse recovery.
— 3.28 — mJ See Fig. 9, 10, 18
— 3.60 10.9
— 1.46 2.6
— 70 —
mJ IC = 5.0A
TJ = 150°C, See Fig. 10,11, 18
— 36 —
— 890 —
ns IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100
— 890 —
Energy losses include "tail" and
— 3.83 — mJ diode reverse recovery.
— 7.5 — nH Measured 5mm from package
— 280 —
VGE = 0V
— 30 —
— 4.0 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
— 28 42
— 38 57
ns TJ = 25°C See Fig.
TJ = 125°C 14
IF =4.0A
— 2.9 5.2
— 3.7 6.7
A TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
— 40 60 nC TJ = 25°C See Fig.
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
— 280 — A/µs TJ = 25°C See Fig.
— 235 —
TJ = 125°C 17
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10.0
8.0
6.0 Square wave:
60% of rated
voltage
4.0
I
2.0 Ideal diodes
0.0
0.1
IRG4BC10SDPBF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation =9.2 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 100
TJ = 25 °C
10 TJ = 150 °C
VGE = 15V
80µs PULSE WIDTH
1
0.5 1.0 1.5 2.0 2.5 3.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10 TJ = 150 °C
TJ = 25 °C
VCC = 50V
ss PPUULLSSEEWWIDIDTHTH
1
6 8 10 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3



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IRG4BC10SDPbF
16
12
3.00 VGE = 15V
80 us PULSE WIDTH
2.50
IC = 16 A
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
2.00
IC = 8 A
1.50
IC = 4 A
1.00
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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International Rectifier
IRG4BC10SDPBF pdf

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