IRFZ34S Datasheet PDF - Vishay

www.Datasheet-PDF.com

IRFZ34S
Vishay

Part Number IRFZ34S
Description Power MOSFET
Page 9 Pages


IRFZ34S datasheet pdf
View PDF for PC
IRFZ34S pdf
View PDF for Mobile


No Preview Available !

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
60
VGS = 10 V
46
Qgs (nC)
11
Qgd (nC)
22
Configuration
Single
0.050
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D
G
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAKis a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
-
Lead (Pb)-free
IRFZ34SPbF
SiHFZ34S-E3
Note
a. See device orientation.
D2PAK (TO-263)
-
IRFZ34STRRPbFa
SiHFZ34STRPbFa
D2PAK (TO-263)
SiHFZ34STRL-GE3
IRFZ34STRLPbFa
SiHFZ34STLPbFa
I2PAK (TO-262)
-
IRFZ34LPbF
SiHFZ34L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 260 μH, Rg = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34, SiHFZ34 data and test conditions.
LIMIT
60
± 20
30
21
120
0.59
200
88
3.7
4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90368
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C / W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VDS/TJ
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mAc
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 18 Ab
VDS = 25 V, ID = 18 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
VGS = 10 V
ID = 30 A, VDS = 48 V,
see fig. 6 and 13b, c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30 V, ID = 30 A,
Rg = 12 , RD = 1.0 , see fig. 10b, c
Fall Time
tf
MIN. TYP. MAX. UNIT
60 -
-V
- 0.065 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.05
9.3 -
-S
- 1200 -
- 600 - pF
- 100 -
- - 46
- - 11 nC
- - 22
- 13 -
- 100 -
ns
- 29 -
- 52 -
Internal Source Inductance
LS
Between lead, and center of die contact
-
7.5
-
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 30
A
- - 120
Body Diode Voltage
VSD
TJ = 25 °C, IS = 30 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μsb, c
-
120 230 ns
Qrr - 700 1400 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFZ34, SiHFZ34 data and test conditions.
www.vishay.com
2
Document Number: 90368
S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90368
S11-1045-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 90368
S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



IRFZ34S datasheet pdf
Download PDF
IRFZ34S pdf
View PDF for Mobile


Related : Start with IRFZ34 Part Numbers by
IRFZ34 Power MOSFET IRFZ34
Fairchild Semiconductor
IRFZ34 pdf
IRFZ34 (IRFZ30 / IRFZ34) N-Channel Power MOSFET IRFZ34
Samsung Electronics
IRFZ34 pdf
IRFZ34 Power MOSFET IRFZ34
International Rectifier
IRFZ34 pdf
IRFZ34 Power MOSFET IRFZ34
Vishay
IRFZ34 pdf
IRFZ34 Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB IRFZ34
New Jersey Semiconductor
IRFZ34 pdf
IRFZ34A Power MOSFET IRFZ34A
Fairchild Semiconductor
IRFZ34A pdf
IRFZ34A Power MOSFET IRFZ34A
Samsung Electronics
IRFZ34A pdf
IRFZ34E HEXFET POWER MOSFET IRFZ34E
International Rectifier
IRFZ34E pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact