IRFZ14 Datasheet PDF - Fairchild Semiconductor

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IRFZ14
Fairchild Semiconductor

Part Number IRFZ14
Description Power MOSFET
Page 7 Pages


IRFZ14 datasheet pdf
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$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175°C Operating Temperature
Lower Leakage Current: 10µA (Max.) @ VDS = 60V
Lower RDS(ON): 0.097(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
IRFZ14
BVDSS = 60 V
RDS(on) = 0.14
ID = 10 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
60
10
7.1
40
±20
86
10
3.0
5.5
30
0.20
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
4.96
--
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation



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IRFZ14
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Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
60 -- -- V
-- 0.059 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=20V
VGS=-20V
VDS=60V
VDS=48V,TC=150°C
-- -- 0.14 VGS=10V,ID=5A
(4)
-- 6.3 --
VDS=30V,ID=5A
(4)
-- 280 360
-- 110 125 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 40 46
-- 11 25
-- 17 40
VDD=30V,ID=10A,
-- 27 60 ns RG=24
See Fig 13 (4) (5)
-- 28 60
-- 12 17
VDS=48V,VGS=10V,
-- 2.4 -- nC ID=10A
-- 5.4 --
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 10
-- 40
Integral reverse pn-diode
A
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=10A,VGS= 0V
-- 55 -- ns TJ=25°C,IF=10A
-- 0.11 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=1mH, IAS=10A, VDD=25V, RG=27, Starting TJ =25°C
(3) ISD 10A, di/dt 200A/µs, VDD BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature



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Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.20
0.15 VGS =10V
0.10
0.05
0.00
0
VGS =20V
@Note: TJ =25oC
10 20 30
ID , Drain Current [A]
40
Fig 5. Capacitance vs. Drain-Source Voltage
600
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C iss
400 C oss
200 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFZ14
Fig 2. Transfer Characteristics
101
175 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. V = 0 V
GS
2. V = 30 V
DS
3. 250 µs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
@Notes :
175 oC
25 oC
1. V =0 V
GS
2. 250µsPulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V , Source-Drain Voltage [V]
SD
2.4
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 12 V
10
VDS = 30 V
VDS = 48 V
5
@ Notes : ID = 10.0 A
0
0 3 6 9 12 15
QG , Total Gate Charge [nC]



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IRFZ14
Fig 7. Breakdown Voltage vs. Temperature
1.2
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Fig 8. On-Resistance vs. Temperature
2.5
1.1 2.0
1.0 1.5
0.9 @ Notes :
1. V = 0 V
GS
2. I
D
= 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 200
T , Junction Temperature [oC]
J
1.0 @ Notes :
1. V = 10 V
GS
2. I = 5 A
D
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
T , Junction Temperature [oC]
J
102
101
100
10-1100
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
@ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
VDS , Drain-Source Voltage [V]
102
Fig 10. Max. Drain Current vs. Case Temperature
12
10
8
6
4
2
0
25 50 75 100 125 150 175
Tc , Case Temperature [oC]
Fig 11. Thermal Response
D=0.5
100 0.2
0.1
0.05
0.02
0.01
10- 1
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=4.96
o C/W
Max.
2. Duty Factor, D=t1/t2
3.
TJ
M
-TC
=PD
M
*Z
θ
J
C
(t)
P
DM
t1
t
2
10- 5
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
101



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