IRFP4468PBF Datasheet PDF - International Rectifier

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IRFP4468PBF
International Rectifier

Part Number IRFP4468PBF
Description HEXFET Power MOSFET
Page 8 Pages


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PD -97134
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFP4468PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
100V
2.0m:
2.6m:
ID (Silicon Limited) 290A c
S ID (Package Limited) 195A
D
S
GD
TO-247AC
G
G ate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
D
Drain
S
Source
Max.
290c
200
195
1120
520
3.4
± 20
10
-55 to + 175
300
10lbxin (1.1Nxm)
740
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
5/21/08
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IRFP4468PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
100 ––– ––– V VGS = 0V, ID = 250μA
––– 0.09 ––– V/°C Reference to 25°C, ID = 5mAd
––– 2.0 2.6 mΩ VGS = 10V, ID = 180A g
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
––– ––– 20 μA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 0.8 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
310 ––– –––
Qg Total Gate Charge
––– 360 540
Qgs Gate-to-Source Charge
––– 81 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 89
Qsync
Total Gate Charge Sync. (Qg - Qgd)
––– 270 –––
td(on)
Turn-On Delay Time
––– 52 –––
tr Rise Time
––– 230 –––
td(off)
Turn-Off Delay Time
––– 160 –––
tf Fall Time
––– 260 –––
Ciss Input Capacitance
––– 19860 –––
Coss Output Capacitance
––– 1360 –––
Crss Reverse Transfer Capacitance
––– 540 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1550 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 900 –––
S VDS = 50V, ID = 180A
nC ID = 180A
VDS =50V
VGS = 10V g
ID = 180A, VDS =0V, VGS = 10V
ns VDD = 65V
ID = 180A
RG = 2.7Ω
VGS = 10V g
pF VGS = 0V
VDS = 50V
ƒ = 100 kHz, See Fig. 5
VGS = 0V, VDS = 0V to 80V i, See Fig. 11
VGS = 0V, VDS = 0V to 80V h
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) d
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 290c A MOSFET symbol
showing the
––– ––– 1120 A integral reverse
p-n junction diode.
G
––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V g
––– 100
ns TJ = 25°C
VR = 85V,
––– 110
––– 370
TJ = 125°C
nC TJ = 25°C
IF = 180A
di/dt = 100A/μs g
––– 420
TJ = 125°C
––– 6.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 180A, di/dt 600A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.045mH
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 180A, VGS =10V. Part not recommended for use
above this value .
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
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1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
1
0.01
4.0V 60μs PULSE WIDTH
Tj = 25°C
0.1 1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
TJ = 25°C
10
1
2.0
VDS = 25V
60μs PULSE WIDTH
3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
35000
30000
25000
20000
VGS = 0V, f = 100 kHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
15000
10000
5000
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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IRFP4468PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
4.0V
10
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 180A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 180A
VDS= 80V
12 VDS= 50V
VDS= 20V
8
4
0
0 50 100 150 200 250 300 350 400 450
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFP4468PbF
1000
TJ = 175°C
100
10 TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
LIMITED BY PACKAGE
250
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
20 40 60 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
10 LIMITED BY PACKAGE
1msec
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10 100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
120
ID = 5mA
110
100
90
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
3000
2500
2000
ID
TOP 30A
41A
BOTTOM 180A
1500
1000
500
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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International Rectifier
IRFP4468PBF pdf

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