IRFB3256PbF Datasheet PDF - International Rectifier

www.Datasheet-PDF.com

IRFB3256PbF
International Rectifier

Part Number IRFB3256PbF
Description HEXFET Power MOSFET
Page 9 Pages


IRFB3256PbF datasheet pdf
Download PDF
IRFB3256PbF pdf
View PDF for Mobile

No Preview Available !

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97727
IRFB3256PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.7mΩ
3.4mΩ
206A
S ID (Package Limited)
75A
D
DS
G
TO-220AB
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
dEAS Single Pulse Avalanche Energy (Thermally Limited)
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
ijJunction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
D
Drain
S
Source
Max.
206
172
75
820
300
2.0
± 20
3.3
-55 to + 175
300 (1.6mm from case)
x x10lbf in (1.1N m)
340
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
09/22/11



No Preview Available !

IRFB3256PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
Min.
60
–––
–––
2.0
88
RG Internal Gate Resistance
IDSS Drain-to-Source Leakage Current
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
–––
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
Ciss Input Capacitance
–––
–––
Coss Output Capacitance
–––
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
Coss eff. (TR) Effective Output Capacitance (Time Related) –––
Typ.
–––
29
2.7
–––
–––
0.79
–––
–––
–––
–––
Typ.
130
31
42
88
22
77
55
64
6600
720
400
1080
1400
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
™––– mV/°C Reference to 25°C, ID = 1.0mA
f3.4 mΩ VGS = 10V, ID = 75A
4.0 V VDS = VGS, ID = 150μA
––– S VDS = 25V, ID = 75A
––– Ω
20
250
100
-100
μA VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Max. Units
Conditions
195 nC ID = 75A
f––– VDS = 30V
––– VGS = 10V
––– ID = 75A, VDS =0V, VGS = 10V
––– ns VDD = 39V
––– ID = 75A
f––– RG = 2.7Ω
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 48V
––– ƒ = 1.0 MHz, See Fig. 5
h––– VGS = 0V, VDS = 0V to 48V , See Fig. 11
g––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 206 A MOSFET symbol
D
––– ––– 820
showing the
A integral reverse
G
––– ––– 1.3
fp-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
S
––– 43 ––– ns TJ = 25°C
VR = 51V,
––– 53 –––
TJ = 125°C
––– 58 ––– nC TJ = 25°C
fIF = 75A
di/dt = 100A/μs
––– 65 –––
TJ = 125°C
––– 2.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 50Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD 75A, di/dt 890A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
2
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ Rθ is measured at TJ approximately 90°C.
ˆ RθJC value shown is at time zero.
www.irf.com



No Preview Available !

1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.0V
4.75V
4.50V
4.25V
4.25V
10
1
0.01
60μs PULSE WIDTH
Tj = 25°C
0.1 1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
VDS = 25V
60μs PULSE WIDTH
1.0
234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000 Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.0V
4.75V
4.50V
4.25V
IRFB3256PbF
4.25V
10
1
0.01
60μs PULSE WIDTH
Tj = 175°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.2
ID = 75A
2.0 VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 75A
12.0
VDS= 48V
10.0
VDS= 30V
VDS= 12V
8.0
6.0
4.0
2.0
0.0
0 20 40 60 80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3



No Preview Available !

IRFB3256PbF
1000
100 TJ = 175°C
10 TJ = 25°C
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
250
200 Limited by package
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10 10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0.1 1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
72
ID = 1.0mA
70
68
66
64
62
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 12A
24A
BOTTOM 75A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
www.irf.com



IRFB3256PbF datasheet pdf
Download PDF
IRFB3256PbF pdf
View PDF for Mobile


Related : Start with IRFB3256Pb Part Numbers by
IRFB3256PbF HEXFET Power MOSFET IRFB3256PbF
International Rectifier
IRFB3256PbF pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact