IRF830P-HF-3 Datasheet PDF - Advanced Power Electronics

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IRF830P-HF-3
Advanced Power Electronics

Part Number IRF830P-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
IRF830P-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Performance
RoHS-compliant, Halogen-free
G
D
S
BV DSS
RDS(ON)
ID
500V
1.5
4.5A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The IRF830P-3 is in the TO-220 through-hole package which is
widely used in commercial and industrial applications where a
small PCB footprint or an attached heatsink is required.
This device is well suited for low voltage applications such as
DC/DC converters and DC motor drives.
G
DS
TO-220 (P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
500
+20
4.5
2.8
18
74
0.59
101
4.5
-55 to 150
-55 to 150
Value
1.7
62
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Unit
°C/W
°C/W
Ordering Information
IRF830P-3TB
RoHS-compliant TO-220, shipped in tubes
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200704202-3 1/5



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Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
VGS=0V, ID=1mA
VGS=10V, ID=2.7A
VDS=VGS, ID=250uA
VDS=10V, ID=2.7A
VDS=500V, VGS=0V
VDS=400V, VGS=0V
VGS=±20V
ID=3.1A
VDS=400V
VGS=10V
VDD=250V
ID=3.1A
RG=12, VGS=10V
RD=80.6
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Test Conditions
Tj=25°C, IS=4.5A, VGS=0V
IS=3.1A,VGS=0V,
dI/dt=100A/µs
Notes:
1.Pulse width limited by maximum junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25
3.Pulse test
IRF830P-HF-3
Min. Typ. Max. Units
500 - - V
- - 1.5
2 - 4V
- 2.4 -
S
- - 25 uA
- - 250 uA
- - ±100 nA
- 28 45 nC
- 4 - nC
- 16 - nC
- 10 - ns
- 15 - ns
- 41 - ns
- 20 - ns
- 710 1140 pF
- 170 - pF
- 60 - pF
- 2 3.0
Min. Typ. Max. Units
- - 1.5 V
- 370 - ns
- 3.9 - uC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Typical Electrical Characteristics
8
T C =25 o C
6
10V
7.0V
6.0V
4
2 5.0V
V G =4.5V
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 3. Normalised BVDSS
vs. Junction Temperature
10
150
8
T j = 150 o C
T j = 25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
IRF830P-HF-3
5
T C =150 o C
4
3
10V
7 .0V
6 .0V
5 .0 V
2
V G = 4. 5 V
1
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =2.7A
V G =10V
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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Electronics Corp.
Typical Electrical Characteristics (cont.)
IRF830P-HF-3
12
I D =3.1A
10
V DS =100V
V DS =250V
8 V DS =400V
6
4
2
0
0 10 20 30
Q G , Total Gate Charge (nC)
40
Fig 7. Gate Charge Characteristics
f=1.0MHz
10000
1000
C iss
C oss
100
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
100us
1ms
1
T c =25 o C
Single Pulse
10ms
100m
1s
0.1
1
DC
10 100 1000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
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Advanced Power Electronics
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