IRF7739L2PBF Datasheet PDF - International Rectifier

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IRF7739L2PBF
International Rectifier

Part Number IRF7739L2PBF
Description Power MOSFET
Page 11 Pages


IRF7739L2PBF datasheet pdf
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l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
IRF7739L2PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
40V min ±20V max 0.70m@ 10V
Qg tot
Qgd
Vgs(th)
220nC
81nC
2.8V
Applicable DirectFET Outline and Substrate Outline 
SB SC
M2
M4
L8 DirectFET™ ISOMETRIC
L4 L6 L8
The IRF7739L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Part number
Package Type
IRF7739L2TRPbF DirectFET2 Large Can
IRF7739L2TR1PbF DirectFET2 Large Can
Standard Pack
Form
Q uan tity
Tape and Reel
4000
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
10
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
0.93
ID = 160A
0.92
8 0.91
6 TJ = 25°C
0.90
0.89
4 0.88
VGS = 10V
2
TJ = 125°C
0.87
0.86
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.85
0
40
Max.
40
±20
270
190
46
375
1070
270
160
80 120
Units
V
A
mJ
A
160 200
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.021mH, RG = 25, IAS = 160A.
1
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IRF7739L2PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
40
–––
–––
2.0
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
280
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.008
0.70
2.8
-6.7
–––
–––
–––
–––
–––
220
46
19
81
74
100
83
1.5
21
71
56
42
11880
2510
1240
8610
2230
Typ.
–––
–––
–––
87
250
Max.
–––
–––
1.0
4.0
–––
20
250
100
-100
–––
330
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
110
1070
1.3
130
380
Units
Conditions
V VGS = 0V, ID = 250µA
iV/°C Reference to 25°C, ID = 1.0mA
mVGS = 10V, ID = 160A
V VDS = VGS, ID = 250µA
mV/°C
µA VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 160A
VDS = 20V
nC VGS = 10V
ID = 160A
See Fig. 9
nC VDS = 16V, VGS = 0V
Ãi
VDD = 20V, VGS = 10V
ID = 160A
ns RG=1.8
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
Units
Conditions
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
iV TJ = 25°C, IS = 160A, VGS = 0V
ins TJ = 25°C, IF = 160A, VDD = 20V
nC di/dt = 100A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2
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Absolute Maximum Ratings
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
TP
TJ
TSTG
fPower Dissipation
fPower Dissipation
cPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
IRF7739L2PbF
Max.
125
63
3.8
270
-55 to + 175
Typ.
–––
12.5
20
–––
–––
Max.
40
–––
–––
1.2
0.50
Units
W
°C
Units
°C/W
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.1080
0.6140
τi (sec)
0.000171
0.053914
τ4τ4 0.4520 0.006099
1.47e-05 0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case „
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„
ˆ
TC measured with
Used double sided
thermocouple incontact with top (Drain) of
cooling, mounting pad with large heatsink.
part.
Š
back and with small clip
Rθ is measured at TJ of
heatsink.
approximately
90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
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1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1 60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
4.5V
1
10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
1000
100
IRF7739L2PbF
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
60µs PULSE WIDTH
Tj = 175°C
4.5V
10
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0
ID = 160A
VGS = 10V
1.5
1
VDS = 25V
60µs PULSE WIDTH
0.1
2345678
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
14.0
12.0
ID= 160A
10.0
VDS= 32V
VDS= 20V
10000
Ciss
Coss
Crss
8.0
6.0
4.0
2.0
1000
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
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0.0
0
50 100 150 200 250
QG, Total Gate Charge (nC)
Fig 9. Typical Total Gate Charge vs.
Gate-to-Source Voltage
300
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