IRF7204PBF Datasheet PDF - International Rectifier

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IRF7204PBF
International Rectifier

Part Number IRF7204PBF
Description Power MOSFET
Page 9 Pages


IRF7204PBF datasheet pdf
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PD - 95165
IRF7204PbF
l Adavanced Process Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
S1
S2
8
A
D
7D
VDSS = -20V
S3
G4
6 D RDS(on) = 0.060
5D
Top View
ID = -5.3A
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-5.3
-4.2
-21
2.5
0.020
± 12
-1.7
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max.
50
Units
°C/W
10/6/04



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IRF7204PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20 ––– ––– V VGS = 0V, ID = -250µA
––– -0.022 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.060
––– ––– 0.10
VGS = -10V, ID = -5.3A ƒ
VGS = -4.5V, ID = -2.0A ƒ
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
––– 7.9 ––– S VDS = -15V, ID = -5.3A ƒ
––– ––– -25 µA VDS = -16V, VGS = 0V
––– ––– -250
VDS = -16V, VGS = 0V, TJ = 125 °C
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
––– 25 –––
ID = -5.3A
––– 5.0 ––– nC VDS = -10V
––– 8.0 –––
VGS = -10V ƒ
––– 14 30
VDD = -10V
––– 26 60 ns ID = -1.0A
––– 100 150
RG = 6.0
––– 68 100
RD = 10ƒ
––– 2.5 –––
nH
Between lead,6mm(0.25in.)
from package and center G
––– 4.0 –––
of die contact
D
S
––– 860 –––
VGS = 0V
––– 750 ––– pF VDS = -10V
––– 230 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -2.5
––– ––– -15
––– ––– -1.2
––– 85 100
––– 77 120
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
ns TJ = 25°C, IF = -2.4A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD -5.3A, di/dt 90A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.



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IRF7204PbF
-VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
-VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
Fig 3. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
Fig 4. Normalized On-Resistance
Vs. Temperature



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IRF7204PbF
-VDS , Drain-to-Source Voltage ( V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
QG , Total Gate Charge ( nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
10 1ms
10ms
TTJA
=
=
25 ° C
150° C
Single Pulse
1
0.1
1
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area



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