IPU135N03LG Datasheet PDF - Infineon

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IPU135N03LG
Infineon

Part Number IPU135N03LG
Description Power-Transistor
Page 12 Pages


IPU135N03LG datasheet pdf
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Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Product Summary
V DS
R DS(on),max
ID
30 V
13.5 m
30 A
Type
IPD135N03L G
IPF135N03L G
IPS135N03L G
IPU135N03L G
Package
Marking
PG-TO252-3-11
135N03L
PG-TO252-3-23
135N03L
PG-TO251-3-11
135N03L
PG-TO251-3-21
135N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.0
ID
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=10 A, R GS=25
I D=30 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
30
26
30
21
210
30
20
6
±20
Unit
A
mJ
kV/µs
V
2006-10-23



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Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Value
31
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 4.9 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
Gate-source leakage current
Drain-source on-state resistance5)
Gate resistance
Transconductance
V DS=30 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=20 A
V GS=10 V, I D=30 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
-
-
-
-
-
22
10 100
10 100 nA
16.4 20.5 m
11.3 13.5
1.2 -
43 - S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 1.0
page 2
2006-10-23



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Parameter
Symbol Conditions
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
Q oss
V DD=15 V, V GS=0 V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
6) See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
770 1000 pF
350 470
16 -
3 - ns
3-
12 -
2-
2.7 - nC
1.2 -
1.2 -
2.6 -
4.8 -
3.5 - V
10 -
4.2 - nC
9-
-
-
0.98
25 A
210
1.2 V
- 10 nC
2006-10-23



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1 Power dissipation
P tot=f(T C)
IPD135N03L G
IPS135N03L G
2 Drain current
I D=f(T C); V GS10 V
IPF135N03L G
IPU135N03L G
35 35
30 30
25 25
20 20
15 15
10 10
55
0
0 50 100
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
150
0
200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
102
101
limited by on-state
resistance
DC
100 ns
1 µs
10 µs
100 µs
1 ms
100
0.5
0.2
1
0.1
0.05
0.02
0.01
0.1 single pulse
200
10-1
10-1
Rev. 1.0
100 101
V DS [V]
102
0.01 0
10-6
0
10-5
0
10-4
0
10-3
0
10-2
0
10-1
1
100
t p [s]
page 4
2006-10-23



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