IP4256CZ3-M Datasheet PDF - NXP Semiconductors


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IP4256CZ3-M
NXP Semiconductors

Part Number IP4256CZ3-M
Description (IP4256CZx-M) Single and dual-channel passive filter network
Page 13 Pages

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DataSheet.in
IP4256CZ3-M/CZ5-W/CZ6-F
Single and dual-channel passive filter network with
ESD protection
Rev. 1 — 23 July 2010
Product data sheet
1. Product profile
1.1 General description
The IP4256CZ3-M is a single-channel low-pass filter while the IP4256CZ5-W and
IP4256CZ6-F are dual-channel RC low-pass filters. All devices provide high-level
ElectroStatic Discharge (ESD) protection.
The devices are designed to protect a range of portable communication transmitter
applications against unwanted RF signals. The devices incorporate diodes to provide
protection to downstream components from ESD voltages up to ±25 kV contact discharge
far exceeding IEC 61000-4-2, level 4.
The devices are manufactured using monolithic silicon technology in lead-free plastic
packages.
1.2 Features and benefits
„ Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
„ 100 Ω series channel resistance and 30 pF channel capacitance at 0 V bias
voltage (DC)
„ ESD protection up to ±25 kV contact discharge far exceeding IEC 61000-4-2, level 4
„ Single and dual-channel integrated π-type RC filter network
„ IP4256CZ3-M: single-channel device in a 3-pin Quad Flat-pack No-leads (QFN)
compatible MicroPak plastic package
„ IP4256CZ5-W: dual-channel device in a 5-pin plastic package with 0.5 mm pitch
„ IP4256CZ6-F: dual-channel device in a 6-pin QFN compatible MicroPak plastic
package with 0.5 mm pitch
1.3 Applications
„ General-purpose ElectroMagnetic Interference (EMI), Radio Frequency
Interference (RFI) filtering and downstream ESD protection for:
‹ Cellular phone and Personal Communication System (PCS) mobile handset
‹ Cordless telephone
‹ Wireless data (WAN/LAN) system



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DataSheet.in
NXP Semiconductors
IP4256CZ3-M/CZ5-W/CZ6-F
Single and dual-channel passive filter network with ESD protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VESD
electrostatic
all pins to ground
[1]
discharge voltage
contact discharge
- - ±25 kV
air discharge
- - ±25 kV
Rs(ch)
channel series
resistance
80 100 120 Ω
Cch channel capacitance for the total channel;
f = 100 kHz
Vbias(DC) = 0 V
Vbias(DC) = 2.5 V
- 30 - pF
- 19 - pF
[1] According to IEC 61000-4-2 model.
2. Pinning information
Table 2. Pinning
Pin Description
IP4256CZ3-M (SOT883)
1 and 2
channel 1 filter
3 ground (GND)
IP4256CZ5-W (SOT665)
1 and 5
channel 1 filter
2 ground (GND)
3 and 4
channel 2 filter
IP4256CZ6-F (SOT886)
1 and 6
channel 1 filter
2 and 5
ground (GND)
3 and 4
channel 2 filter
Simplified outline Graphic symbol
1
3
2
Transparent
top view
1
Rs(ch)
Cch
2
3
2
Cch
2
018aaa042
54
1,3
123
Rs(ch)
Cch
2
2
4,5
Cch
2
018aaa043
123
1,3
65
bottom view
4
Rs(ch)
Cch Cch
22
4,6
2,5
018aaa044
IP4256CZ3-M_CZ5-W_CZ6-F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2010
© NXP B.V. 2010. All rights reserved.
2 of 13



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DataSheet.in
NXP Semiconductors
IP4256CZ3-M/CZ5-W/CZ6-F
Single and dual-channel passive filter network with ESD protection
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
IP4256CZ3-M SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
IP4256CZ5-W -
plastic surface-mounted package; 5 leads
IP4256CZ6-F XSON-6 plastic extremely thin small outline package; no leads;
6 terminals; body 1 × 1.45 × 0.5 mm
Version
SOT883
SOT665
SOT886
4. Marking
Table 4. Marking codes
Type number
IP4256CZ3-M
IP4256CZ5-W
IP4256CZ6-F
Marking code
6M
6W
6F
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCC
VESD
supply voltage
electrostatic discharge
voltage
all pins to ground
contact discharge
0.5
[1]
-
air discharge
-
IEC 61000-4-2, level 4 [2]
contact discharge
-
air discharge
-
Pch
Ptot
Tstg
Tamb
channel power dissipation Tamb = 85 °C
total power dissipation Tamb = 85 °C
storage temperature
ambient temperature
-
-
55
40
Max
+5.6
Unit
V
±25 kV
±25 kV
±8
±15
60
120
+150
+85
kV
kV
mW
mW
°C
°C
[1] According to IEC 61000-4-2 model.
[2] Devices withstand up to 1000 discharges of ±25 kV according to the IEC 61000-4-2 model without
degradation and exceeds the specified level 4 (8 kV contact discharge).
IP4256CZ3-M_CZ5-W_CZ6-F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2010
© NXP B.V. 2010. All rights reserved.
3 of 13



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DataSheet.in
NXP Semiconductors
IP4256CZ3-M/CZ5-W/CZ6-F
Single and dual-channel passive filter network with ESD protection
6. Characteristics
Table 6. Channel characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Rs(ch)
Cch
channel series resistance
channel capacitance
for the total channel;
f = 100 kHz
Vbias(DC) = 0 V
Vbias(DC) = 2.5 V
IRM reverse leakage current per channel; VI = 3.5 V
VBR breakdown voltage
positive clamp; II = 1 mA
VF forward voltage
negative clamp; IF = 1 mA
Table 7. Frequency characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
αil insertion loss
Rsource = 50 Ω; RL = 50 Ω
800 MHz < fi < 3 GHz
fi = 1 GHz
αct
crosstalk attenuation
Rsource = 50 Ω; RL = 50 Ω;
800 MHz < fi < 3 GHz
Min Typ Max Unit
80 100 120 Ω
- 30
- 19
--
5.8 -
1.5 -
- pF
- pF
0.1 μA
9V
+0.4 V
Min Typ Max Unit
20 -
-
- 25 -
- 25 -
dB
dB
dB
IP4256CZ3-M_CZ5-W_CZ6-F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2010
© NXP B.V. 2010. All rights reserved.
4 of 13




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