www.Datasheet-PDF.com


Part Number

HYG210P06LQ1D

Manufacturer HOOYI
Short Description P-Channel Enhancement Mode MOSFET
Long Description HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-40A RDS(ON)= 19mΩ(typ.)@VGS = -10V RDS(ON)= 25

Datasheet : HYG210P06LQ1D



  • HYG210P06LQ1C2 Single P-Channel Enhancement Mode MOSFET
  • HYG210P06LQ1D P-Channel Enhancement Mode MOSFET
  • HYG210P06LQ1U P-Channel Enhancement Mode MOSFET
  • HYG210P06LQ1V P-Channel Enhancement Mode MOSFET
  • This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.

    Since 2010   ::   HOME   ::   Privacy Policy + Contact