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Part Number

HYG210P06LQ1D

Manufacturer HOOYI
Short Description P-Channel Enhancement Mode MOSFET
Long Description HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-40A RDS(ON)= 19mΩ(typ.)@VGS = -10V RDS(ON)= 25
Page 11 Pages

Datasheet : HYG210P06LQ1D



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