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Part Number

HYG170ND03LA1C1

Manufacturer HUAYI
Short Description Dual N-Channel Enhancement Mode MOSFET
Long Description HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET Feature  30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)=

Datasheet : HYG170ND03LA1C1



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