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Part Number

HYG082N03LR1S

Manufacturer HUAYI
Short Description N-Channel Enhancement Mode MOSFET
Long Description HYG082N03LR1S N-Channel Enhancement Mode MOSFET Feature  30V/11A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=11 mΩ(typ.

Datasheet : HYG082N03LR1S



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