HRS85N08K Datasheet PDF - SemiHow

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HRS85N08K
SemiHow

Part Number HRS85N08K
Description N-Channel MOSFET
Page 7 Pages


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HRS85N08K
80V N-Channel Trench MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 75nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 7 (Typ.) @VGS=10V
‰ 100% Avalanche Tested
August 2014
BVDSS = 80 V
RDS(on) typ = 7
ID = 110 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
80
110 *
77 *
385 *
ρ25
350
6.5
65
0.43
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.3
62.5
Units
/W
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 40 A
2.2
--
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 40 A
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 64 V, VGS = 0 V
VDS = 64 V, TJ = 125
VGS = ρ25 V, VDS = 0 V
80
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 40 V, ID = 30 A,
RG = 6 Ÿ
VDS = 64 V, ID = 30 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
-- 3.8 V
7.0 8.5 mŸ
70 --
S
-- -- V
-- 1
-- 100
-- ρ100
3200
440
270
1.2
--
--
--
--
Ÿ
50 --
65 --
140 --
50 --
75 --
20 --
25 --
nC
nC
nC
-- 110
A
-- 385
-- 1.3 V
45 --
65 -- nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=0.5mH, IAS=28A, VDD=35V, RG=25:, Starting TJ =25qC
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Typical Characteristics
VGS
Top : 15 V
10 V
8V
7V
102
6V
5.5 V
5V
Bottom : 4.5 V
* Notes :
101 1. 300us Pulse Test
2. T = 25oC
C
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
9.5
VGS = 10V
9.0
8.5
8.0
7.5
7.0
6.5
Note : T = 25oC
J
6.0
0 50 100 150 200 250
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4000
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
C
iss
2000
1000
Coss * Note ;
1. VGS = 0 V
Crss 2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10
175oC
25oC
1
* Notes :
1. VDS= 20V
2. 300us Pulse Test
0.1
0 2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
1
0.1
0.0
175oC 25oC
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.4 0.8 1.2 1.6
VSD, Source-Drain Voltage [V]
2.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 64V
DS
ID = 30V
0
0 20 40 60 80
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
 Note :
1. VGS = 0 V
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
103 Operation in This Area
is Limited by R DS(on)
100 Ps
102 1 ms
10 ms
100 ms
101
DC
100
* Notes :
10-1 1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
10-2
10-1 100 101 102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. I = 40 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
120
90
60
30
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
175
100 D=0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
single pulse
* Notes :
1. ZTJC(t) = 2.3 oC/W Max.
2. Duty Factor, D=t1/t2
3.
T
JM
-
T
C
=
P
DM
*
ZTJC(t)
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t , Square Wave Pulse Duration [sec]
1
101
Figure 11. Transient Thermal Response Curve
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HRS85N08K datasheet pdf
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