HRS120N10K Datasheet PDF - SemiHow

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HRS120N10K
SemiHow

Part Number HRS120N10K
Description N-Channel MOSFET
Page 7 Pages


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HRS120N10K
100V N-Channel Trench MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 65 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 10 (Typ.) @VGS=10V
‰ 100% Avalanche Tested
July 2014
BVDSS = 100 V
RDS(on) typ = 10
ID = 73 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
100
73 *
51 *
200 *
ρ25
240
5.0
50
0.33
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.0
62.5
Units
/W
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 40 A
2.0
--
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 40 A
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 80 V, VGS = 0 V
VDS = 80 V, TJ = 125
VGS = ρ25 V, VDS = 0 V
100
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 30 A,
RG = 6 Ÿ
VDS = 80 V, ID = 30 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
-- 3.6
10 12
70 --
-- --
-- 1
-- 100
-- ρ100
3150
340
180
1.2
--
--
--
--
40 --
50 --
120 --
40 --
65 --
12 --
24 --
-- 73
-- 200
-- 1.3
50 --
80 --
V
mŸ
S
V
Ÿ
nC
nC
nC
A
V
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=0.5mH, IAS=27A, VDD=25V, RG=25:, Starting TJ =25qC
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Typical Characteristics
V
GS
Top : 15 V
10 V
8V
102
7V
6V
5.5 V
5V
Bottom : 4.5 V
* Notes :
101 1. 300us Pulse Test
2. T = 25oC
C
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
16
VGS = 10V
14
12
10
Note : TJ = 25oC
8
0 40 80 120 160
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4000
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
Ciss
2000
1000
0
10-1
* Note ;
Coss
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10
175oC
1
25oC
* Notes :
1. VDS= 15V
2. 300us Pulse Test
0.1
0 2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
175oC 25oC
1
0.1
0.0
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.4 0.8 1.2 1.6
VSD, Source-Drain Voltage [V]
2.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 80V
DS
ID = 30V
0
0 20 40 60 80
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
 Note :
1. VGS = 0 V
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
103
Operation in This Area
is Limited by R DS(on)
102 100 Ps
1 ms
10 ms
101 100 ms
DC
100
10-1
10-2
10-1
* Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100 101
VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. I = 40 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
175
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
single pulse
* Notes :
1. ZTJC(t) = 3.0 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
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HRS120N10K datasheet pdf
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