HFA15PB120 Datasheet PDF - nELL

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HFA15PB120
nELL

Part Number HFA15PB120
Description Ultrafast Soft Recovery Diode
Page 5 Pages


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SEMICONDUCTOR
HFA15PB120 RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
15A / 1200V
FEATURES
Ultrafast and ultrasoft recovery
Very low IRRM and Qrr
Compliant to RoHS
Designed and qualified for industrial level
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
HFA15PB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a
superb combination of characteristics which result in
performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V and
15A continuous current,the HFA15PB120 is especially
well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultrafast recovery time,
the FRED product line features extremely low values
of peak recovery current (IRRM) and does not exhibit
any tendency to “snap-off” during the tb portion of
recovery. The FRED features combine to offer
designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the
switching transistor. These FRED advantages can
help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15PB120 is
ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
TO-247 AC modified
common
cathode
2
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
lF(AV)
VR
VF at lF, at 25°C
trr (typ.)
TJ max.
Diode variation
TO-247AC modified (2 pins)
15A
1200 V
2.3 V
33 ns
150ºC
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
lFSM
lFRM
PD
TJ, TStg
TEST CONDITIONS
Tc = 100 ºC
Tc = 25 ºC
Tc = 100 ºC
VALUES
600
15
180
60
151
60
- 55 to + 150
UNITS
V
A
W
ºC
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SEMICONDUCTOR
HFA15PB120 RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Cathode to anode
breakdown voltage
VBR
Maximum forward voltage
VFM
Maximum reverse
leakage current
Junction capacitance
Series inductance
IRM
CT
LS
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
IR = 100 µA
1200
IF = 15 A
IF = 30 A
IF = 15 A, TJ = 125 ºC
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
Measured lead to lead 5 mm from package body
-
-
-
-
-
-
-
TYP.
-
1.8
2.7
1.8
1.00
375
27
8
MAX. UNITS
-
2.3
3.2
2.3
20
2000
40
-
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
IF = 0.5A, IR = 1.0A, IRR = 0.25A (RG#1 CKT)
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR =30 V, TJ = 25°C
trr1 TJ = 25 ºC
-
-
-
38 45
33 -
240 60
Peak recovery current
Reverse recovery charge
trr2
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
IF= 15A
dIF/dt = 200 A/µs
VR = 800 V
- 290 120
- 3 6.0
- 6 10
- 260 180
- 960 600
Peak rate of fall of recovery
current during tb
dl(rec)M/dt1
dl(rec)M/dt2
TJ = 25 ºC
TJ = 125 ºC
- 120 -
- 76 -
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
0.063'' from case (1.6 mm) for 10 s
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC Modified
MIN.
-
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.18
UNITS
°C
- 41
- 41
0.25
-
6.0 -
0.21 -
- 12
(10)
HFA15PB120
K/W
g
oz.
kgf . cm
(lbf . in)
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SEMICONDUCTOR
HFA15PB120 RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
1.20
1.00
0.80
0.60
D = 0.9
0.7
0.5
0.40
0.20
0
10-5
0.3
0.1
0.05
10-4
SINGLE PULSE
10-3
10-2
Rectangular pulse duration (seconds)
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
1
Fig.2 Forward current vs. forward voltage
60
50
TJ = 175°C
40 TJ = 125°C
TJ = 25°C
30
TJ = -55°C
20
10
0
0 12345
Anode-to-cathode voltage-VF (V)
Fig.4 Reverse recovery charge vs. current
rate of change
2500
2000
30A
TJ = 125°C
VR = 800V
1500
1000
500
15A
7.5A
0
0 200 400 600 800 1000 1200
Current rate of change-diF/dt(A/µs)
Fig3. Reverse recovery time vs. current rate
of change
400
350
300
30A
TJ = 125°C
VR = 800V
250 15A
7.5A
200
150
100
50
0
0 200 400 600 800 1000 1200
Current rate of change-diF/dt(A/µs)
Fig.5 Reverse recovery current vs. current
rate of change
25
TJ = 125°C
VR = 800V
20
30A
15
10 15A
7.5A
5
0
0 200 400 600 800 1000 1200
Current rate of change-diF/dt(A/µs)
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SEMICONDUCTOR
Fig6. Dynamic parameters vs. junction temperature
1.2
1.0
trr
0.8
IRRM
Qrr
trr
0.6
Qrr
0.4
0.2
0.0
0 25 50 75 100 125 150
Junction temperature (°C),TJ
HFA15PB120 RRooHHSS
Nell High Power Products
Fig.7 Maximum average forward current vs. case temperature
30
Duty cycle = 0.5
25 TJ =150°C
20
15
10
5
0
25 50 75 100 125 150 175
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
80
70
60
50
40
30
20
10
0
1 10 100 200
reverse voltage (V), VR
Fig.9 Reverse recovery parameter test circuit
VR = 200 V
L = 70 µH
0.01Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig.10 Reverse recovery waveform and definitions
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IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 I RRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
t rrx lRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Page 4 of 5



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