H11A617D Datasheet PDF - Fairchild Semiconductor

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H11A617D
Fairchild Semiconductor

Part Number H11A617D
Description 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Page 9 Pages


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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
PACKAGE
H11A817 SERIES
H11AA814 SCHEMATIC
1 4 COLLECTOR
4
2 3 EMITTER
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300%
H11A817: 50-600%
H11AA814A: 50-150%
H11A817A: 80-160%
H11A617A: 40%-80%
H11A817B: 130-260%
H11A617B: 63%-125%
H11A817C: 200-400%
H11A617C: 100%-200%
H11A817D: 300-600%
H11A617D: 160%-320%
• Minimum BVCEO of 70V guaranteed
APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
H11A617 & H11A817 SCHEMATIC
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
© 2003 Fairchild Semiconductor Corporation
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4/24/03



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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
VCEO
VECO
IC
PD
Device
Value
Units
All
-55 to +150
°C
All
-55 to +100
°C
All
260 for 10 sec
°C
All 200 mW
All
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
All
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
50 mA
6
5
V
1.0 A
100 mW
1.33 mW/°C
70 V
6
7V
6
50 mA
150 mW
2.0 mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Device
Min Typ* Max Unit
EMITTER
(IF = 60 mA)
H11A617A/B/C/D
1.35 1.65
Input Forward Voltage
(IF = 20 mA)
(IF = ±20 mA)
VF
H11A817/A/B/C/D
H11AA814/A
1.2 1.5
1.2 1.5
V
Reverse Leakage Current
(VR = 6.0 V)
(VR = 5.0 V)
IR
H11A617A/B/C/D
H11A817/A/B/C/D
.001 10 µA
DETECTOR
Collector-Emitter Breakdown
Voltage
(IC = 1.0 mA, IF = 0) BVCEO
ALL
70 100
V
Emitter-Collector Breakdown
Voltage
(IE = 100 µA, IF = 0) BVECO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7 10
6
V
Collector-Emitter Dark Current
(VCE = 10V, IF = 0)
ICEO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
H11A617A/B
100
1 nA
50
Collector-Emitter Capacitance (VCE = 0 V, f = 1 MHz) CCE
ALL
8 pF
*Typical values at TA = 25°C.
© 2003 Fairchild Semiconductor Corporation
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min Typ* Max Unit
(IF = ±1 mA, VCE = 5 V) (note 1)
H11AA814
20
300 %
(IF = ±1 mA, VCE = 5 V) (note 1)
H11AA814A
50
150 %
H11A617A
40
80 %
(IF = 10 mA, VCE = 5 V) (note 1)
H11A617B
H11A617C
63
100
125 %
200 %
H11A617D
160
320 %
Current Transfer
Ratio
(IF = 5 mA, VCE = 5 V) (note 1)
CTR
H11A817
H11A817A
H11A817B
H11A817C
50
80
130
200
600 %
160 %
260 %
400 %
H11A817D
300
600 %
H11A617A
13
%
(IF = 1 mA, VCE = 5 V) (note 1)
H11A617B
H11A617C
22
34
%
%
H11A617D
56
%
Collector-Emitter
Saturation Voltage
(IC = 1 mA, IF = ±20 mA)
(IC = 2.5 mA, IF = 10 mA)
(IC = 1 mA, IF = 20 mA)
VCE (SAT)
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
0.2
0.4 V
0.2
AC Characteristic
Rise Time
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2)
tr
ALL
2.4 18 µs
Fall Time
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2)
tf
ALL
2.4 18 µs
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
*Typical values at TA = 25°C.
Test Conditions
f = 60Hz, t = 1 min
(VI-O = 500 VDC)
(VI-O = 0, f = 1 MHz)
Symbol
VISO
RISO
CISO
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Min
5300
1011
Typ*
0.5
Max Units
Vac(rms)
pf
© 2003 Fairchild Semiconductor Corporation
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Fig. 1 Normalized CTR vs. Forward Current
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30
IF - FORWARD CURRENT (mA)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
.14
IF = 20 mA
IC = 1 mA
.12
.1
.08
.06
.04
.02
0
-50 -25
0 25 50 75 100 125
TA - AMBIENT TEMPERATURE (˚C)
Fig. 5 Collector Current
vs. Collector-Emitter Voltage
25
IF = 20 mA
20
Fig. 2 Normalized CTR vs. Ambient Temperature
1.2
IF = 10 mA
1
0.8
IF = 5 mA
0.6
0.4
-50 -25 0 +25 +50 +75 +100
TA - AMBIENT TEMPERATURE (˚C)
Fig. 4 Forward Voltage vs. Forward Current
1.7
1.5
1.3
T = -55˚C
1.1
T = 25˚C
0.9
T = 100˚C
0.7
0.5
0.1 0.2 0.5 1.0 2.0
5
10 20 50 100
IF - FORWARD CURRENT (mA)
15
IF = 10 mA
10
IF = 5 mA
5
0
0
IF = 1 mA
12345678
VCE - COLLECTOR-EMITTER VOLTAGE (V)
9
10
© 2003 Fairchild Semiconductor Corporation
Page 4 of 9
4/24/03



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