H11A2 Datasheet PDF - Infineon Technologies AG

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H11A2
Infineon Technologies AG

Part Number H11A2
Description (H11Ax) Industry Standard Single Channel 6 Pin DIP Optocoupler
Page 6 Pages


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PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
DEVICE TYPES
Part No. CTR % Min. Part No.
CTR % Min.
Dimensions in Inches (mm)
4N25
4N26
4N27
4N28
4N35
4N36
4N37
4N38
H11A1
H11A2
H11A3
H11A4
H11A5
20
20
10
10
100
100
100
10
50
20
20
10
30
MCT2
MCT2E
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
20
20
50
4590
75150
125250
225400
7090
1560
100
FEATURES
• Interfaces with Common Logic Families
321
pin one ID
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Anode 1
Cathode 2
4 56
.335 (8.50)
.343 (8.70)
NC 3
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
6 Base
5 Collector
4 Emitter
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300.347
(7.628.81)
.114 (2.90)
.130 (3.0)
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS®
• 5300 VRMS Isolation Test Voltage
• Underwriters Laboratory File #E52744
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard DataShee
Single Channel Phototransistor Couplers. These families include the
DataSh4eNe2t54/U26.c/2o7m/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
V
DE
VDE #0884 Approval Available with Option 1
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 VRMS Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)® on the phototransistor substrate. These isolation pro-
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
DataSheet4U.com
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–53
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Maximum Ratings TA=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t10 µs)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 VRMS
Creepage .............................................................................................. 7.0 mm
Clearance ............................................................................................. 7.0 mm
Isolation Thickness between Emitter and Detector ............................... 0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
VIO=500 V, TA=25°C...............................................................................1012
VIO=500 V, TA=100°C............................................................................ 1011
Storage Temperature................................................................ 55°C to +150°C
Operating Temperature ............................................................ 55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane 1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics TA=25°C
Emitter
et4U.com Forward Voltage*
Reverse Current*
Capacitance
Detector
Breakdown Voltage*
Collector-Emitter
Emitter-Collector
Collector-Base
ICEO(dark)*
4N25/26/27
4N28
ICBO(dark)*
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N25/26
4N27/28
Symbol Min. Typ.
VF 1.3
DIaRtaSheet4U.com 0.1
CO 25
BVCEO 30
BVECO
7.0
BVCBO 70
— — 5.0
10
— — 2.0
CCE 6.0
CTR
20 50
10 30
Max.
1.5
100
Unit
V
µA
pF
V
50 nA
100
20 nA
pF
%
Condition
IF=50 mA
VR=3.0 V
VR=0
IC=1.0 mA
IE=100 µA
IC=100 µA
VCE=10 V, (base open)
VCB=10 V, (emitter open)
VCE=0
VCE=10 V, IF=10 mA
DataShee
Isolation Voltage*
4N25
4N26/27
VIO
2500 — — V
Peak, 60 Hz
1500
4N28
500
Saturation Voltage, Collector-Emitter
VCE(sat)
0.5 V
ICE=2.0 mA, IF=50 mA
Resistance, Input to Output*
RIO 100 — — GVIO=500 V
Coupling Capacitance
CIO 0.5 pF f=1.0 MHz
Rise and Fall Times
tr, tf 2.0 µs IF=10 mA
VCE=10 V, RL=100
DataSheet*4InUd.iccaotmes JEDEC registered values
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
254
Phototransistor, Industry Standard
March 27, 2000-00
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4N35/36/37/38—Characteristics TA=25°C
Emitter
Symbol Min. Typ.
Forward Voltage*
VF 1.3
0.9
Reverse Current*
Capacitance
Detector
IR 0.1
CO 25
Breakdown Voltage, Collector-Emitter*
4N35/36/37
4N38
BVCEO
30
80
Breakdown Voltage, Emitter-Collector*
BVECO 7.0
Breakdown Voltage, Collector-Base*
4N35/36/37 BVCBO 70
4N38
80
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
ICEO
5.0
——
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
ICEO
——
6.0
Capacitance, Collector-Emitter
Package
CCE 6.0
DC Current Transfer Ratio*
4N35/36/37 CTR
100
4N38
20
DC Current Transfer Ratio*
4N35/36/37 CTR
40 50
et4U.com Resistance, Input to Output*
Coupling Capacitance
Switching Time*
* Indicates JEDEC registered value
4N38
— — 30
RIO 1011
CIO 0.5
DtaOtNa, StOhFeF et4U.com10
H11A1 through H11A5—Characteristics TA=25°C
Emitter
Symbol Min.
Forward Voltage
H11A1H11A4
H11A5
VF
Reverse Current
Capacitance
Detector
IR
C0
Breakdown Voltage, Collector-Emitter
Breakdown Voltage, Emitter-Collector
Breakdown Voltage, Collector-Base
Leakage Current, Collector-Emitter
Capacitance, Collector-Emitter
Package
BVCEO
BVECO
BVCBO
ICEO
CCE
30
7.0
70
DC Current Transfer Ratio
H11A1
CTR
50
H11A2/3
20
H11A4
10
H11A5
30
Saturation Voltage, Collector-Emitter
VCEsat
Capacitance, Input to Output
CIO
Switching Time
tON, tOFF
DataSheet4U.com
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
255
Typ.
1.1
1.1
50
5.0
6.0
0.5
3.0
DataSheet4 U .com
Max.
1.5
1.7
10
Unit
V
µA
pF
Condition
IF=10 mA
IF=10 mA, TA=55°C
VR=6.0 V
VR=0, f=1.0 MHz
V
V
V
——
50 nA
50
500 µA
pF
IC=1.0 mA
IE=100 µA
IC=100 µA, IB=1.0 µA
VCE=10 V, IF=0
VCE=60 V, IF=0
VCE=30 V, IF=0, TA=100°C
VCE=60 V, IF=0, TA=100°C
VCE=0
% VCE=10 V, IF=10 mA,
VCE=1.0 V, IF=20 mA
% VCE=10 V, IF=10 mA,
— — TA=55 to 100°C
VIO=500 V
pF f=1.0 MHz
DataShee
µs IC=2.0 mA, RL=100 Ω, VCC=10 V
Max.
1.5
1.7
10
Unit
V
µA
pF
Condition
IF=10 mA
VR=3.0 V
VR=0, f=1.0 MHz
V
IC=1.0 mA, IF=0 mA
V
IE=100 µA, IF=0 mA
V
IC=10 µA, IF=0 mA
50 nA VCE=10 V, IF=0 mA
pF VCE=0
%
0.4 V
pF
µs
VCE=10 V, IF=10 mA
ICE=0.5 mA, IF=10 mA
IC=2.0 mA, RL=100 Ω, VCE=10 V
Phototransistor, Industry Standard
March 27, 2000-00
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MCT2/MCT2E—Characteristics TA=25°C
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Base
Leakage Current
Collector-Emitter
Collector-Base
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
Symbol
VF
IR
CO
BVCEO
BVECO
BVCBO
ICBO
ICBO
CCE
CTR
CIO
RIO
tON, tOFF
Min.
30
7.0
70
20
Typ.
1.1
25
5.0
10
60
0.5
100
3.0
Max.
1.5
10
Unit
V
µA
pF
V
50 nA
20
pF
%
pF
G
µs
Condition
IF=20 mA
VR=3.0 V
VR=0, f=1.0 MHz
IC=1.0 mA, IF=0 mA
IE=100 µA, IF=0 mA
IC=10 µA, IF=0 mA
VCE=10 V, IF=0
VCE=0
VCE=10 V, IF=10 mA
IC=2.0 mA, RL=100 Ω, VCE=10 V
MCT270 through MCT277—Characteristics TA=25°C
Emitter
Symbol Min.
Forward Voltage
Reverse Current
Capacitance
et4U.com
Detector
Breakdown Voltage
Leakage Current, Collector-Emitter
Package
VF
IR
CO
Collector-Emitter BVCEO 30
Emitter-CollDecattoarShBeVeEt4COU.com7.0
Collector-Base BVCBO 70
ICEO
DC Current Transfer Ratio
MCT270
CTR
50
MCT271
45
MCT272
75
MCT273
125
MCT274
225
MCT275
70
MCT276
15
MCT277
100
Current Transfer Ratio, CollectorEmitter
MCT271276
MCT277
CTRCE
12.5
40
CollectorEmitter Saturation Voltage
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
MCT270/272
MCT271
VCEsat
CIO
RIO
tON, tOFF
MCT273
MCT274
MCT275/277
MCT276
DataSheet4U.com
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
256
DataSheet4 U .com
Typ.
25
Max.
1.5
10
Unit
V
µA
pF
——V
——
———
50 nA
Condition
IF=20 mA
VR=3.0 V
VR=0, f=1.0 MHz
IC=10 µA, IF=0 mA
IE=10 µA, IF=0 mA
IC=10 µA, IF=0 mA
VCE=10 V, IF=0 mA
DataShee
0.5
1012
90
150
250
400
210
60
0.4
10
7.0
20
25
15
3.5
%
%
V
pF
µs
VCE=10 V, IF=10 mA
VCE=0.4 V, IF=16 mA
ICE=2.0 mA, IF=16 mA
VIO=500 VDC
IC=2.0 mA,
RL=100 ,
VCE=5.0 V
Phototransistor, Industry Standard
March 27, 2000-00
DataSheet4U.com



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