H11A1 Datasheet PDF - Motorola Inc

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H11A1
Motorola Inc

Part Number H11A1
Description 6-Pin DIP Optoisolators Transistor Output
Page 6 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
6-Pin DIP Optoisolators
Transistor Output
The H11A1 device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
Current Transfer Ratios (CTR) 30% and 50%
Economical Optoisolators for General Purpose/High Volume Applications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
Monitor and Detection Circuits
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current — Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
VR 3 Volts
IF 60 mA
PD 120 mW
1.41 mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
VCEO
VECO
VCBO
IC
PD
30 Volts
7 Volts
70 Volts
150 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD 250 mW
2.94 mW/°C
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
TA – 55 to +100
Tstg – 55 to +150
°C
°C
Soldering Temperature (10 sec, 1/16from case)
TL 260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
©MMoottoorroolal,aInOc.p1t9o9e5lectronics Device Data
Order this document
by H11A1/D
H11A1*
[CTR = 50% Min]
*Motorola Preferred Device
STYLE 1 PLASTIC
61
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
16
25
34
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1



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H11A1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
INPUT LED
Forward Voltage (IF = 10 mA,
TA = 25°C)
TA = –55°C
TA = 100°C
VF
Reverse Leakage Current (VR = 3 V)
Capacitance (V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
IR
CJ
Collector–Emitter Dark Current (VCE = 10 V)
TA = 25°C
TA = 100°C
ICEO
Collector–Base Dark Current (VCB = 10 V)
TA = 25°C
TA = 100°C
ICBO
Collector–Emitter Breakdown Voltage (IC = 10 mA)
V(BR)CEO
Collector–Base Breakdown Voltage (IC = 100 µA)
V(BR)CBO
Emitter–Collector Breakdown Voltage (IE = 100 µA)
V(BR)ECO
DC Current Gain (IC = 5 mA, VCE = 5 V) (Typical Value)
hFE
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)
CCE
Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)
CCB
Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)
CEB
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V) H11A1
IC (CTR)(2)
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Min
30
70
7
5 (50)
7500
1011
Typ(1)
1.15
1.3
1.05
0.01
18
1
1
0.2
100
45
100
7.8
500
7
19
9
12 (120)
0.1
2.8
4.5
1.2
1.3
0.2
Max Unit
1.5 Volts
10 µA
— pF
50 nA
µA
20 nA
— Volts
— Volts
— Volts
——
— pF
— pF
— pF
— mA (%)
0.4 Volts
µs
µs
µs
µs
— Vac(pk)
— pF
2 Motorola Optoelectronics Device Data



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2
PULSE ONLY
PULSE OR DC
1.8
1.6
TYPICAL CHARACTERISTICS
10
NORMALIZED TO:
IF = 10 mA
1
H11A1
1.4
TA = –55°C
1.2 25°C
1 100°C
1 10 100 1000
IF, LED FORWARD CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current
0.1
0.01
0.5 1 2
5 10 20 50
IF, LED INPUT CURRENT (mA)
Figure 2. Output Current versus Input Current
28
24 IF = 10 mA
20
16
5 mA
12
8
4 2 mA
0
01
234
567
1 mA
8 9 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Current versus
Collector–Emitter Voltage
10
7
5
NORMALIZED TO TA = 25°C
2
1
0.7
0.5
0.2
0.1
–60 –40 –20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Output Current versus Ambient Temperature
NORMALIZED TO:
VCE = 10 V
100 TA = 25°C
10
VCE = 30 V
1
10 V
0.1
0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Dark Current versus Ambient Temperature
100
50 VCC = 10 V
20
{10 RL = 1000
tf
{5 RL = 100
2
tr
tf
tr
1
0.1 0.2
0.5 1 2
5 10 20
IF, LED INPUT CURRENT (mA)
Figure 6. Rise and Fall Times
(Typical Values)
50 100
Motorola Optoelectronics Device Data
3



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H11A1
100
70
50
VCC = 10 V
20 RL = 1000
10 100
7
5 10
2
1
0.1 0.2
0.5 0.7 1 2
5 7 10 20
IF, LED INPUT CURRENT (mA)
50 70 100
Figure 7. Turn–On Switching Times
(Typical Values)
4
IF = 0
3
2
IB = 7 µA
6 µA
5 µA
4 µA
3 µA
1
2 µA
1 µA
0 2 4 6 8 10 12 14 16 18 20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only)
100
70
50 VCC = 10 V
20
RL = 1000
10
7
5
100
10
2
1
0.1 0.2
0.5 0.7 1 2
5 7 10 20
IF, LED INPUT CURRENT (mA)
50 70 100
Figure 8. Turn–Off Switching Times
(TypicalValues)
20
18
16
14
12
10
8
6
4
2
0
0.05 0.1
CLED
CCB
CEB
CCE
0.2 0.5 1 2
5
V, VOLTAGE (VOLTS)
f = 1 MHz
10 20 50
Figure 10. Capacitances versus Voltage
IF = 10 mA
INPUT
TEST CIRCUIT
VCC = 10 V
RL = 100
OUTPUT
WAVEFORMS
INPUT PULSE
10%
90%
ton
tr
OUTPUT PULSE
tf
toff
Figure 11. Switching Time Test Circuit and Waveforms
4 Motorola Optoelectronics Device Data



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