H1116 Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES

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H1116
SHANTOU HUASHAN ELECTRONIC DEVICES

Part Number H1116
Description PNP SILICON TRANSISTOR
Page 3 Pages


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DataSheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICO N T R A N S I S T O R
H1116
APPLICATIONS
Audio frequency power Aamplifier& Medium
Speed switching Low frequency power amplifier.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
-55~150
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
75 0mW
- 60 V
- 50 V
VEBO Emitter- Base Voltage
-6V
IC Collector Current
-1A
ICP Collector Current Pulse
-2A
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE 1 DC Current Gain
HFE 2 DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
fT Current Gain-Bandwidth Product
Cob Output Capacitance
hFE Classification
TO-92
1 Emitter E
2 Collector C
3 Base B
Unit Test Conditions
135 270
200 400
300 600



No Preview Available !

DataSheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1116



No Preview Available !

DataSheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R ANSISTOR
H1116



H1116 datasheet pdf
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H1116 pdf
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