H10NC60FI Datasheet PDF - ST Microelectronics

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H10NC60FI
ST Microelectronics

Part Number H10NC60FI
Description STH10NC60FI
Page 9 Pages


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STW10NC60
STH10NC60FI
N-CHANNEL 600V - 0.6- 10A - TO-247/ISOWATT218
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW10NC60
www.DataSheet4U.cSoTmH10NC60FI
600 V
600 V
< 0.75 10 A
< 0.75 10 A (*)
s TYPICAL RDS(on) = 0.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (1)
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
February 2002
Value
STW10NC60 STH10NC60FI
600
600
±30
10 10 (*)
6.3 6.3 (*)
40 40 (*)
160 60
1.28 0.48
3.5
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
– 55 to 150
°C
(1)ISD 10A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by Maximum Temperature Allowed
1/9

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ST Microelectronics
H10NC60FI pdf

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