H03N60 Datasheet PDF - Hi-Sincerity Mocroelectronics

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H03N60
Hi-Sincerity Mocroelectronics

Part Number H03N60
Description N-Channel Power Field Effect Transistor
Page 5 Pages


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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 1/5
H03N60 Series
N-Channel Power Field Effect Transistor
Description
H03N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H03N60 Series
Symbol:
G
S
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H03N60E (TO-220AB)
H03N60F (TO-220FP)
Derate above 25°C
H03N60E (TO-220AB)
H03N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
3
12
±30
55
28
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H03N60E, H03N60F
HSMC Product Specification

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H03N60 N-Channel Power Field Effect Transistor H03N60
Hi-Sincerity Mocroelectronics
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