GS2N7002 Datasheet PDF - GTM

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GS2N7002
GTM

Part Number GS2N7002
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2004/09/15
REVISED DATE :2006/01/17B
GS2N7002
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
Description
The GS2N7002 is universally used for all commercial-industrial surface mount applications.
Package Dimensions
60V
4.5
500mA
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Operating Junction and Storage Temperature Range
Tj, Tstg
Drain-Source Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (tp 50us)
Continuous Drain Current (1)
Pulsed Drain Current (2)
VDS
VGS
VGSM
ID
IDM
Power Dissipation
PD
Thermal Resistance ,Junction-to-Ambient
RthJA
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.8 1.10
0 0.10
0.8 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
-55 ~ +150
60
±20
±40
500
800
225
556
Unit
V
V
V
mA
mA
mW
/W
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
Static Drain-Source on-State Resistance RDS(ON)
Forward Transconductance
Input Capacitance
GFS
Ciss
60
1
-
-
500
-
-
80
-
- - V VGS=0, ID=250uA
- 2.5 V VDS=2.5V, ID=0.25mA
- ±100 nA VGS=±20V, VDS=0
- 1 uA VDS=60V, VGS=0
- - mA VDS=7.5V, VGS=10V
-5
ID=50mA, VGS=5V
- 4.5
ID=500mA, VGS=10V
- - mS VDS>2 VDS(ON), ID=200mA
- 50 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
-
-
- 25 pF VDS=25V, VGS=0V, f=1MHz
- 5 pF
(1)The Power Dissipation of the package may result in a continuous train current.
(2)Pulse Width 300us, Duty cycle 2%.
GS2N7002
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Characteristics Curve
ISSUED DATE :2004/09/15
REVISED DATE :2006/01/17B
GS2N7002
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ISSUED DATE :2004/09/15
REVISED DATE :2006/01/17B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GS2N7002
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