GPT14N65D Datasheet PDF - Greatpower

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GPT14N65D
Greatpower

Part Number GPT14N65D
Description POWER FIELD EFFECT TRANSISTOR
Page 8 Pages


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GPT14N65 / GPT14N65D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
PIN CONFIGURATION
TO-220F
TO-3P/T-O247
Top View
Top View
SYMBOL
D
G
12 3
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous (TO3P)
Pulsed
Gate-to-Source Voltage Continue
Total Power Dissipation – TO220FP
– TO3P
– TO247
Derate above 25– TO220FP
– TO3P
– TO247
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 12A, L = 10mH, RG = 25Ω)
Thermal Resistance Junction to Case -TO220FP
TO3P
Junction to Ambient -TO220FP
TO3P
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
ESD SENSITIVITY HBM, C=100pF, R=1.5kΩ
Symbol
ID
IDM
VGS
PD
TJ, TSTG
EAS
θJC
θJA
TL
Vesd
Value
14
42
±30
47
245
201
0.37
2.1
1.9
-55 to 150
720
3.15
0.47
62.5
40
260
2000
Unit
A
V
W
W/
mJ
/W
V
2013-08-16 Rev 2.0
Greatpower Microelectronic Corp.
Page 1



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GPT14N65 / GPT14N65D
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
GPT14N65GN3P*
GPT14N65GN247*
GPT14N65DGN220FP*
*Note: G : Suffix for PB Free Product
Package
TO-3P
TO-247
TO-220F
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Symbol
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
V(BR)DSS
Drain-Source Leakage Current
(VDS = 650 V, VGS = 0 V)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
IGSSF
Gate-Source Leakage Current-Reverse
(Vgsr = 30 V, VDS = 0 V)
IGSSR
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
VGS(th)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 7 A) *
RDS(on)
Forward Transconductance (VDS = 50 V, ID = 7 A) *
gFS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
(VDD = 325 V, ID = 14 A,
RG = 25Ω) *
tr
td(off)
Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 520 V, ID = 14 A,
VGS = 10 V)*
Qg
Qgs
Qgd
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 14 A,
dIS/dt = 100A/μs)
VSD
ton
trr
* Pulse Test: Pulse Width 300μs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
GPT14N65
Min Typ Max
650
1
100
100
35
14
2861
235
10.4
40.5
77.8
62.4
38.9
56.1
17.8
22.7
0.5
**
509.3
1.5
Units
V
uA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
2013-08-16 Rev 2.0
Greatpower Microelectronic Corp.
Page 2



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GPT14N65 / GPT14N65D
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150
O peration Tem perature (C)
Fig 1. On-Resistance Vs. Temperature
3
2.6
2.2
1.8
1.4
1
0.6
0.2
-50 -25
0 25 50 75 100 125 150
OperationTemperature(C)
Fig.2 Breakdown Voltage Variation vs.
Temperature
100
10V
8V
6.5V
10
5.5V
1
0.1
0.1
20usPULSEW IDTH
TJ=25C
1 10
VDS,Drain-to-SourceVoltage[V]
100
Fig 3. Typical Output Characteristics
25C
150C
Fig 4. Typical Transfer Characteristics
2013-08-16 Rev 2.0
Greatpower Microelectronic Corp.
Page 3



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GPT14N65 / GPT14N65D
POWER FIELD EFFECT TRANSISTOR
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
2013-08-16 Rev 2.0
Greatpower Microelectronic Corp.
Page 4



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