GPT12N60D Datasheet PDF - Greatpower

www.Datasheet-PDF.com

GPT12N60D
Greatpower

Part Number GPT12N60D
Description POWER FIELD EFFECT TRANSISTOR
Page 6 Pages


GPT12N60D datasheet pdf
View PDF for PC
GPT12N60D pdf
View PDF for Mobile


No Preview Available !

GPT12N60 / GPT12N60D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Reduced Gate Charge
Ultra Low On-Resistance Provides Higher Efficiency
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Front View
D
G
12 3
ABSOLUTE MAXIMUM RATINGS
S
N-Channel MOSFET
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Total Power Dissipation – TO220
– TO220FP
Derate above 25– TO220
– TO220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 10.5A, L = 10mH, RG = 25Ω)
Thermal Resistance Junction to Case -TO220
Junction to Case -TO220FP
Junction to Ambient -TO220, TO220FP
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
11.5
34.5
±30
210
39
1.44
0.39
-55 to 150
551
0.53
3.3
62.5
260
Unit
A
V
W
W/
mJ
/W
2013/6/26 V1.3
Greatpower Microelectronic Corp.
Page 1



No Preview Available !

GPT12N60 / GPT12N60D
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
GPT12N60GN220
GPT12N60DGN220FP
*Note: G : Suffix for Pb Free Product
Package
TO-220
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 6A) *
Forward Transconductance (VDS = 15 V, ID = 6A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
4Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 12 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 480 V, ID = 12 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 12A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT12N60
Min Typ Max
600
1
100
100
35
11
1681.8
168.9
11
26.7
27.1
53.3
33.1
37.8
8.48
15.2
0.65
**
466.7
1.5
Units
V
uA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
2013/6/26 V1.3
Greatpower Microelectronic Corp.
Page 2



No Preview Available !

GPT12N60 / GPT12N60D
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (C)
Fig 1. On-Resistance Vs. Temperature
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (C)
Fig.2 Breakdown Voltage Variation vs.
Temperature
100
10V
8V
6.5V
5.5V
10 5V
25C
1
0.1
20us PULSE WIDTH
TJ=25C
0.01
0.1
1 10
VDS, Drain-to-Source Voltage [V]
100
Fig 3. Typical Output Characteristics
150C
Fig 4. Typical Transfer Characteristics
2013/6/26 V1.3
Greatpower Microelectronic Corp.
Page 3



No Preview Available !

GPT12N60 / GPT12N60D
POWER FIELD EFFECT TRANSISTOR
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
2013/6/26 V1.3
Greatpower Microelectronic Corp.
Page 4



GPT12N60D datasheet pdf
Download PDF
GPT12N60D pdf
View PDF for Mobile


Related : Start with GPT12N60 Part Numbers by
GPT12N60 POWER FIELD EFFECT TRANSISTOR GPT12N60
Greatpower
GPT12N60 pdf
GPT12N60D POWER FIELD EFFECT TRANSISTOR GPT12N60D
Greatpower
GPT12N60D pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact