GPT09N70D Datasheet PDF - Greatpower

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GPT09N70D
Greatpower

Part Number GPT09N70D
Description POWER FIELD EFFECT TRANSISTOR
Page 6 Pages


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GPT09N70 / GPT09N70D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Reduced Gate Charge
Ultra Low On-Resistance Provides Higher Efficiency
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Front View
D
G
123
ABSOLUTE MAXIMUM RATINGS
S
N-Channel MOSFET
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Total Power Dissipation – TO220
– TO220FP
Derate above 25– TO220
– TO220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25Ω)
Thermal Resistance Junction to Case -TO220
Junction to Case -TO220FP
Junction to Ambient -TO220, TO220FP
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
8.5
25.5
±30
190
38
1.43
0.36
-55 to 150
320
0.6
3.5
62.5
260
Unit
A
V
W
W/
mJ
/W
2013/11/30 V1.0
Greatpower Microelectronic Corp.
Page 1



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GPT09N70 / GPT09N70D
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
GPT09N70GN220
GPT09N70DGN220FP
*Note: G : Suffix for Pb Free Product
Package
TO-220
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 700 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.5A) *
Forward Transconductance (VDS = 15 V, ID = 4.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 350 V, ID = 9 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 560 V, ID = 9 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 9A, VGS = 0 V,
dIS/dt = 100A/μs)
* Pulse Test: Pulse Width 300μs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT09N70
Min Typ Max
700
1
100
100
35
7
1457.24
125.12
5.95
26.13
23.47
39.5
16
29.3
8.8
12.2
1.2
**
541.3
1.5
Units
V
uA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
2013/11/30 V1.0
Greatpower Microelectronic Corp.
Page 2



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GPT09N70 / GPT09N70D
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
O peration Tem perature (C )
Fig 1. On-Resistance Vs. Temperature
100
10V
8V
6.5V
10 5.5V
1.2
1.1
1
0.9
-50 -25 0 25 50 75 100 125 150
O peration Tem perature (C )
Fig.2 Breakdown Voltage Variation vs.
Temperature
25C
1
0.1
1
20usPU LSE
W IDTH
TJ=25C
10
VDS,Drain-to-SourceVoltage[V]
100
Fig 3. Typical Output Characteristics
150C
Fig 4. Typical Transfer Characteristics
2013/11/30 V1.0
Greatpower Microelectronic Corp.
Page 3



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C iss
C rss
C os
s
GPT09N70 / GPT09N70D
POWER FIELD EFFECT TRANSISTOR
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
2013/11/30 V1.0
Greatpower Microelectronic Corp.
Page 4



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GPT09N70 POWER FIELD EFFECT TRANSISTOR GPT09N70
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