GPT09N45 Datasheet PDF - Greatpower

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GPT09N45
Greatpower

Part Number GPT09N45
Description POWER FIELD EFFECT TRANSISTOR
Page 6 Pages


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GPT09N45
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
Avalanche Energy Specified
without degrading performance over time. In addition, this
Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a
IDSS and VDS(on) Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
TO-220F/TO220
Top View
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Total Power Dissipation (TO220)
(TO220F)
Derate above 25(TO220)
(TO220F)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25Ω)
Thermal Resistance Junction to Case (TO220)
(TO220F)
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
ESD SENSITIVITY HBM, C=100pF, R=1.5kΩ
Symbol
ID
IDM
VGS
PD
TJ, TSTG
EAS
θJC
θJA
TL
Vesd
Value
8.5
25.5
±30
132
38
0.9
0.3
-55 to 150
245
1
4.4
62.5
260
2000
Unit
A
V
W
W/
mJ
/W
V
2013/6/5 Rev1.0
Greatpower Microelectronic Corp.
Page 1



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GPT09N45
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
GPT09N45GN220FP*
GPT09N45GN220*
*Note: G : Suffix for PB Free Product
Package
TO-220F
TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 450 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.5A) *
Forward Transconductance (VDS = 50 V, ID = 4.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 225 V, ID = 9 A,
RD = 17Ω,
RG = 6.2Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 360 V, ID = 9 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS =9 A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT09N45
Min Typ Max
450
1
100
100
2.5 3.5 4.5
0.59
7
1087
119
7.01
20.4
21.7
37.33
14.13
23.7
5.97
8.91
0.7
1.5
**
344
Units
V
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
2013/6/5 Rev1.0
Greatpower Microelectronic Corp.
Page 2



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GPT09N45
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
3
2.6
2.2
1.8
1.4
1
0.6
0.2
-50 -25 0 25 50 75 100 125 150
Operation Temperature (C)
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150
Operation Temperature (C)
Fig 1. On-Resistance Variation with vs. Fig.2 Breakdown Voltage Variation vs.
Temperature
Temperature
100
10V
8V
6.5V
5.5V
10 5V
1
20us PULSE WIDTH
TJ=25C
25C
150C
0.1
0.1
1 10
VDS, Drain-to-Source Voltage [V]
100
Fig 3. Typical Output Characteristics
.
Fig 4. Typical Transfer Characteristics
2013/6/5 Rev1.0
Greatpower Microelectronic Corp.
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GPT09N45
POWER FIELD EFFECT TRANSISTOR
Ciss
Coss
Crss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
.
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
2013/6/5 Rev1.0
Greatpower Microelectronic Corp.
Page 4



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