GPT05N65 Datasheet PDF - Greatpower

www.Datasheet-PDF.com

GPT05N65
Greatpower

Part Number GPT05N65
Description POWER FIELD EFFECT TRANSISTOR
Page 7 Pages


GPT05N65 datasheet pdf
View PDF for PC
GPT05N65 pdf
View PDF for Mobile


No Preview Available !

GENERAL DESCRIPTION
GPT05N65
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand
Higher Current Rating
high energy in the avalanche mode and switch efficiently. This
Lower Rds(on)
new high energy device also offers a drain-to-source diode
Lower Capacitances
with fast recovery time. Designed for high voltage, high speed
Lower Total Gate Charge
switching applications such as power supplies, converters,
Tighter VSD Specifications
power motor controls and bridge circuits.
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Top View
TO-251
Front View
TO-252
Front View
D
G
12 3
123
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain to Current Continuous
Rating
Pulsed
Gate-to-Source Voltage Continue
Total Power Dissipation TO-251,252
TO-220
TO-220FP
Derate above 25
TO-251, 252
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω)
Thermal Resistance Junction to Case TO-251, 252
TO-220
TO220FP
Junction to Ambient TO-251,252
TO-220, TO-220FP
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
ESD SENSITIVITY HBM, C=100pF, R=1.5kΩ
Symbol
ID
IDM
VGS
PD
TJ, TSTG
EAS
θJC
θJA
TL
Vesd
Value
4.9
14.7
±30
50
103
31
0.41
1.1
0.27
-55 to 150
80
2.3
1.15
4.3
120
62.5
260
2000
Unit
A
V
W
W/
mJ
/W
V
2013/6/20 Rev. 1.1
Greatpower Microelectronic Corp.
Page 1



No Preview Available !

GPT05N65
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
Package
GPT05N65GN220*
TO-220
GPT05N65GN220FP*
TO-220 Full Package
GPT05N65GN251*
TO-251
GPT05N65GN252*
*Note: G : Suffix for Pb Free Product
TO-252
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS =650 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = - 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.5A) *
Forward Transconductance (VDS = 15 V, ID = 2.5 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 325 V, ID = 5.0 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 520 V, ID = 5.0 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 5.0 A,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT05N65
Min Typ Max
650
Units
V
1 uA
100 nA
100 nA
2.5 3.5 4.5
V
1.38
4
954.4
78.2
5.53
21.2
18.7
38.1
21.5
20.1
4.85
8.16
1.7
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5
**
265
V
ns
ns
2013/6/20 Rev. 1.1
Greatpower Microelectronic Corp.
Page 2



No Preview Available !

GPT05N65
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2.6
2.2
1.8
1.4
1
0.6
0.2
-50 -25 0 25 50 75 100 125 150
Operation Temperature (C)
Fig 1. On-Resistance Variation with vs.
Temperature
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150
Operation Temperature (C)
Fig.2 Breakdown Voltage Variation vs.
Temperature
100
10V
8V
6.5V
5.5V
10 5V
25C
1
0.1
0.1
20us PULSE WIDTH
TJ=25C
1 10
VDS, Drain-to-Source Voltage [V]
100
Fig 3. Typical Output Characteristics
150C
Fig 4. Typical Transfer Characteristics
2013/6/20 Rev. 1.1
Greatpower Microelectronic Corp.
Page 3



No Preview Available !

Ciss
Coss
Crss
GPT05N65
POWER FIELD EFFECT TRANSISTOR
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
2013/6/20 Rev. 1.1
Greatpower Microelectronic Corp.
Page 4



GPT05N65 datasheet pdf
Download PDF
GPT05N65 pdf
View PDF for Mobile


Related : Start with GPT05N6 Part Numbers by
GPT05N65 POWER FIELD EFFECT TRANSISTOR GPT05N65
Greatpower
GPT05N65 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact