GL100MN1MP Datasheet PDF - Sharp Electrionic Components


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GL100MN1MP
Sharp Electrionic Components

Part Number GL100MN1MP
Description High Power Output Infrared Emitting Diode
Page 11 Pages

GL100MN1MP datasheet pdf
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GL100MN1MPx
GL100MN1MPx Surface Mount Type, High Power
Output Infrared Emitting Diode
Features
1. Compact and thin SMD package
2. Top view and side view mountable
3. Plastic mold with resin lens
4. Peak emission wavelength: 940 nm TYP.
5. Narrow directivity angle (Δθ ±10° TYP.)
6. High power output (φ e: 6.0 mW MAX.)
7. Lead free and RoHS directive compliant
Model Line-up
Model No.
GL100MN1MP
GL100MN1MP1
Packaging
2000 pcs/reel
1500 pcs/reel
Mount Direction
Side view
Top view
Agency Approvals/Compliance
1. Compliant with RoHS directive (2002/95/EC)
2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
(Chinese:
);
refer to page 7.
Applications
1. Office automation equipment
2. Audio visual equipment
3. Home appliances
4. Telecommunication equipment
5. Measuring equipment
6. Tooling machines
7. Computers
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Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1 Sheet No.: D1-A00701EN
Date: November 30, 2007
©SHARP Corporation



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External Dimensions
3.0
1.5
R0.8
2.2
GL100MN1MPx
(0.57)
(0.57)
1
(1.0)
2
(1.0)
Viewed from PCB
(Side view Mounting)
3.0
1.5
Pin Arrangement
1
No. Name
1 Anode
2 2 Cathode
Viewed from PCB
(Top view Mounting)
3.0
1.5 1.1
NOTES:
1. Unit: mm
2. Unspecified tolerance : ±0.2 mm
3. ( ) : Reference dimensions
4. Au-plated area
5. Do not allow circuit runs in area
1.1
1.1
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1.1 (Lens center)
Sheet No.: D1-A00701EN
2



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GL100MN1MPx
Absolute Maximum Ratings
Parameter
Symbol
Forward current
Peak pulsed forward current *1
Reverse voltage
Power dissipation
IF
IFM
VR
P
Operating temperature
Topr
Storage temperature
Tstg
Soldering temperature *2
Tsol
*1 Pulse width: 100 µs, Duty ratio: 0.01
*2 10 s (MAX.) see reflow profile on page 6.
(Ta = 25°C)
Rating Unit
50 mA
0.5 A
6V
75 mW
-30 to +85 °C
-40 to +95 °C
240 °C
Electro-optical Charactertistics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
Response frequency
Half intensity angle
Symbol
VF
VFM
IR
φe
λp
Δλ
Ct
fC
Δθ
Conditions
IF = 20 mA
IFM = 0.5 A
VR = 3 V
IF = 20 mA
IF = 5 mA
IF = 5 mA
VR = 0, f = 1 MHz
MIN.
2.0
TYP.
1.2
3.0
940
45
50
300
±10
MAX.
1.5
4.0
10
6.0
(Ta = 25°C)
Unit
V
V
µA
mW
nm
nm
pF
kHz
degrees
Fig. 1 Forward Current vs.
Ambient Temperature
60
50
40
30
20
10
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0
-30
-50 -25
0
85
25 50 75 100
Ambient temperature Ta (°C)
Fig. 2 Peak Forward Current vs. Duty Ratio
10000
Pulse width 100 µs
Ta = 25°C
1000
100
10
10-4
10-3
10-2
Duty ratio
10-1
100
Sheet No.: D1-A00701EN
3



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Fig. 3 Spectral Distribution
100
80
IF = 5 mA
Ta = 25°C
60
40
20
0
860 880 900 920 940 960 980 1000 1020 1040
Wavelength λ (nm)
Fig. 4 Peak Emission Wavelength vs.
Ambient Temperature
980
IF = constant
970
960
950
940
930
920
-50 -30 -25
0
25 50 75 85 100
Ambient temperature Ta (°C)
GL100MN1MPx
Fig. 5 Forward Current vs. Forward Voltage
1,000
Ta = 85°C
100
50°C
10
1
25°C
0°C
-30°C
0.1
0
0.5 1 1.5 2 2.5
Forward voltage VF (V)
3
Fig. 6 Relative Radiant Flux vs.
Ambient Temperature
10
IF = constant
1
0.1
-50 -30 -25
0
25 50 75 85 100
Ambient temperature Ta (°C)
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Sheet No.: D1-A00701EN
4




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