GI01L60 Datasheet PDF - GTM

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GI01L60
GTM

Part Number GI01L60
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/08/19
REVISED DATE :
GI01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
12
1A
Description
The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters.
Features
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
600
30
1
0.8
3
29
0.232
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
4.3
110
Unit
/W
/W
GI01L60
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ISSUED DATE :2005/08/19
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS 600
-
-
V VGS=0, ID=1mA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.8
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 0.8 -
S VDS=10V, ID=0.5A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=600V, VGS=0
- 100 uA VDS=480V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
- 12
VGS=10V, ID=0.5A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 4.0 -
ID=1A
Qgs - 1.0 - nC VDS=480V
Qgd - 1.1 -
VGS=10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 6.6 -
- 5.0 -
- 11.7 -
- 9.2 -
VDD=300V
ID=1A
ns VGS=10V
RG=3.3
RD=300
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 170 -
- 30.7 -
- 5.1 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1
5
Unit Test Conditions
V IS=1A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1.0mH, RG=25 , IAS=1.0A.
3. Pulse width 300us, duty cycle 2%.
GI01L60
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Characteristics Curve
ISSUED DATE :2005/08/19
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GI01L60
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/08/19
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI01L60
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GI01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GI01L60
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