GE75NF75 Datasheet PDF - GTM

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GE75NF75
GTM

Part Number GE75NF75
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/09/05
REVISED DATE :
GE75NF75
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
75V
11m
80A
Description
The GE75NF75 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*High Density Cell Design for Ultra Low On-Resistance
*High power and Current handing capability
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID @TC=25
Continuous Drain Current
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
75
±25
80
56
200
268
1.78
350
38
-55 ~ +175
Unit
V
V
A
A
A
W
W/
mJ
A
Value
0.56
60
Unit
/W
/W
GE75NF75
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ISSUED DATE :2006/09/05
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
75
2.0
-
-
- - V VGS=0, ID=250uA
- 4.0 V VDS=VGS, ID=250uA
34 -
S VDS=15V, ID=40A
- ±100 nA VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
-
-
1 uA VDS=75, VGS=0
5 uA VDS=60V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
- 11 m VGS=10V, ID=37.5A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 114 -
ID=30A
Qgs - 33 - nC VDS=30V
Qgd - 18 -
VGS=10V
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 21 -
VDS=30V
Tr
Td(off)
Tf
-
-
-
39
70
24
-
-
-
ns
VGS=10V
RG=3
RL=1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 7000 -
- 400 -
- 87 -
VGS=0V
pF VDS=30V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Symbol
VSD
Trr
Qrr
IS
Min.
-
-
-
-
Typ.
-
53
143
-
Max.
1.5
-
-
80
Unit Test Conditions
V IS=75A, VGS=0V, Tj=25
ns IS=30A, VGS=0V
nC dI/dt=100A/ s
A VD= VG=0V, VS=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Starting Tj=25 , VDD=20V, L=0.1mH, RG=25 , IAS=20A.
3. Pulse width 300us, duty cycle 2%.
GE75NF75
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Characteristics Curve
ISSUED DATE :2006/09/05
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
100
10
1
0.1
0.01
0.001
0.0001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GE75NF75
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ISSUED DATE :2006/09/05
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse
Avalanche Capability
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
0.56 /W
Fig 11. Normalized Maximum Transient Thermal Impedance
Important Notice:
Curve
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE75NF75
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GE75NF75 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GE75NF75
GTM
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