GE70T03 Datasheet PDF - GTM

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GE70T03
GTM

Part Number GE70T03
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/02/25
REVISED DATE :2005/12/12B
GE70T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
10m
60A
Description
The GE70T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
25
±20
60
43
195
53
0.36
-55 ~ +175
Unit
V
V
A
A
A
W
W/
Value
2.8
110
Unit
/W
/W
GE70T03
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ISSUED DATE :2005/02/25
REVISED DATE :2005/12/12B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.032
-
35
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=33A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=175 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 250 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 10 m VGS=10V, ID=33A
- 18
VGS=4.5V, ID=20A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 16.5 -
ID=33A
Qgs - 5 - nC VDS=20V
Qgd - 10.3 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 8.2 -
- 105 -
- 21.4 -
- 8.5 -
VDS=15V
ID=33A
ns VGS=10V
RG=3.3
RD=0.45
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1485 -
- 245 -
- 170 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
60
195
Unit Test Conditions
V IS=60A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE70T03
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Characteristics Curve
ISSUED DATE :2005/02/25
REVISED DATE :2005/12/12B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GE70T03
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/02/25
REVISED DATE :2005/12/12B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE70T03
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GE70T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GE70T03
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