GE630 Datasheet PDF - GTM

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GE630
GTM

Part Number GE630
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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ISSUED DATE :2005/06/24
REVISED DATE :
GE630
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
200V
400m
9A
Description
The GE630 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 is universally preferred for all commercial-industrial applications at power dissipation level to
approximately 50 watts. The through-hole version is available for low-profile applications.
Features
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
200
30
9
5.7
36
74
0.59
240
9
7
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
1.7
62
Unit
/W
/W
GE630
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ISSUED DATE :2005/06/24
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS 200
-
-
V VGS=0, ID=1mA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.248
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 40 -
S VDS=10V, ID=5A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=200V, VGS=0
- 100 uA VDS=160V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
- 400 m VGS=10V, ID=5A
25 -
ID=9A
3.6 - nC VDS=160V
14 -
VGS=10V
8-
VDS=100V
26 -
ID=9A
34
-
ns VGS=10V
RG=10
22 -
RD=11
515 -
90 -
40 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
9
36
Unit Test Conditions
V IS=9A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=4.5mH, RG=25 , IAS=9A.
3. Pulse width 300us, duty cycle 2%.
GE630
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Characteristics Curve
ISSUED DATE :2005/06/24
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GE630
Fig 6. Type Power Dissipation
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ISSUED DATE :2005/06/24
REVISED DATE :
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GE630
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/5



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GTM
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