GE15P10 Datasheet PDF - GTM

www.Datasheet-PDF.com

GE15P10
GTM

Part Number GE15P10
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


GE15P10 datasheet pdf
Download PDF
GE15P10 pdf
View PDF for Mobile


No Preview Available !

www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/19
REVISED DATE :
GE15P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-100V
210m
-16A
Description
The GE15P10 (TO-220 package through-hole version) is available for low-profile applications and suited for
low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
-100
±20
-16
-9.8
-64
96
0.77
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.3
62
Unit
/W
/W
GE15P10
Page: 1/4



No Preview Available !

ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -100
-
-
V VGS=0, ID=-1mA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
-0.1
-
V/ Reference to 25 , ID=-1mA
Gate Threshold Voltage
VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA
Forward Transconductance
gfs - 8 - S VDS=-10V, ID=-9A
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- -25 uA VDS=-100V, VGS=0
- -100 uA VDS=-80V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
- 210 m VGS=-10V, ID=-9A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 37 60
ID=-9A
Qgs - 5 - nC VDS=-80V
Qgd - 15 -
VGS=-10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 11 -
VDS=-50V
Tr
Td(off)
-
-
25
56
-
-
ID=-9A
ns VGS=-10V
RG=10
Tf - 36 -
RD=5.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1180 1900
VGS=0V
- 250 -
pF VDS=-25V
- 75 -
f=1.0MHz
Gate Resistance
Rg - 3.6 5
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
95
410
Max.
-1.3
-
-
Unit Test Conditions
V IS=-9A, VGS=0V
ns IS=-9A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE15P10
Page: 2/4



No Preview Available !

Characteristics Curve
ISSUED DATE :2006/01/19
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GE15P10
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4



No Preview Available !

ISSUED DATE :2006/01/19
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE15P10
Page: 4/4



GE15P10 datasheet pdf
Download PDF
GE15P10 pdf
View PDF for Mobile


Related : Start with GE15P1 Part Numbers by
GE15P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GE15P10
GTM
GE15P10 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact