GE13003 Datasheet PDF - GTM

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GE13003
GTM

Part Number GE13003
Description NPN SILICON POWER TRANSISTOR
Page 4 Pages


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ISSUED DATE :2005/01/12
REVISED DATE :
GE13003
NPN SILICON POWER TRANSISTOR
Description
The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is
critical. It is particularly suited for 115 and 220v Switch-mode.
Features
Inductive Switching Matrix 0.5~1.5Amp, 25 and 100
700V Blocking Capability
SOA and Switching Application Information
tc @ 1A, 100
is 290ns(Typ)
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Symbol
Tj
Tstg
VCEO(sus)
VCEO
VEBO
Collector Current -Continuous
-Peak(1)
IC
ICM
Base Current -Continuous
-Peak(1)
IB
IBM
Emitter Current -Continuous
-Peak(1)
Total Power Dissipation at Ta=25
Derate above 25
IE
IEM
PD
Total Power Dissipation at Tc=25
Derate above 25
PD
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
+150
-55 ~ +150
400
700
9
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
Unit
V
V
V
A
A
A
W
mW /
W
mW /
Thermal Characteristics
Parameter
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Maximum Lead Temperature for Soldering
Purposes:1/8” from Case for 5 Seconds
(1)Pulse Test: Pulse Width=5ms, Duty Cycle 10%
Symbol
R JA
R JC
TL
Value
89
3.12
275
Unit
/W
/W
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Electrical Characteristics(Tc = 25
Parameter
Symbol
*Off Characteristics(1)
Collector-Emitter Sustaining Voltage
VCEO(sus)
Collector Cutoff Current
ICEV
Emitter Cutoff Current
*On Characteristics(1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Current-Gain Bandwidth Product
Output Capacitance
*Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Crossover Time
Fall Time
IEBO
VCE(sat)1
VCE(sat)2
VCE(sat)3
VCE(sat)4
VBE(sat)1
VBE(sat)2
VBE(sat)3
HFE1
HFE2
fT
Cob
Td
Tr
Ts
Tf
Tsv
Tc
Tfi
(1)Pulse Test: Pulse Width=300 s, Duty Cycle %
Unless otherwise specified)
Min. Typ. Max. Unit
Test Conditions
400 -
--
--
- V IC=10mA , IB=0
1 VCEV=Rated Value, VBE(off)=1.5V
5 mA VCEV=Rated Value, VBE(off)=1.5V,
TC=100
1 mA VEB=9V
- - 0.5
IC=500mA, IB=100mA
- - 1.0 V IC=1A, IB=250mA
- - 3.0
IC=1.5A, IB=500mA
- - 1.0
IC=1A, IB=250mA, TC=100
- - 1.0
IC=500mA, IB=100mA
- - 1.2 V IC=1A, IB=250mA
- - 1.1
IC=1A, IB=250mA, TC=100
8 - 40
VCE=2V, IC=500mA
5 - 25
VCE=2V, IC=1A
4 10 - MHz VCE=10V, IC=100mA, f=1MHz
- 21 - pF VCB=10V, IE=0, f=0.1MHz
- 0.05 0.1
- 0.5 1
- 24
s
VCC=125V, IC=1A, IB1=IB2=0.2A,
Tp=25 s, Duty Cycle 1%
- 0.4 0.7
- 1.7 4
-
0.29 0.75
s
IC=1A, Vclamp=300V, IB1=0.2A,
VBE(off)=5Vdc, TC=100
- 0.15 -
Classification Of HFE1
Rank
A
Range
8~16
B
15~21
C
20~26
D
25~31
E
30~36
F
35~40
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Characteristics Curve
ISSUED DATE :2005/01/12
REVISED DATE :
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Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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